F59D1G81MB-IP(2M)

The F59D1G81MB-IP(2M) is a 1.074 Gbit SLC NAND Flash memory organized as 128M × 8 with spare area, designed for low-voltage 1.8 V systems. It provides single-level cell reliability, a parallel x8 interface and JEDEC qualification for industrial applications.

Targeted at solid-state mass storage and embedded firmware/boot storage, this device combines on-chip ECC support and block-level management features to meet industrial temperature requirements and long-term data retention needs.

Key Features

• Memory Capacity & Organization — 1.074 Gbit total capacity organized as 128M × 8 plus spare (4M × 8), with a 2K+64 byte page structure for x8 devices.
• Low-Voltage Operation — 1.8 V supply (operating range documented as 1.7 V to 1.95 V) suitable for low-power embedded platforms.
• Read/Program/Erase Performance — Typical page program time ~300 μs and typical block erase time ~4 ms; random read up to 25 μs (max) and page-mode read cycle time at 45 ns per byte as documented for the series.
• Error Correction — Built-in ECC requirement of 4 bit per 512 Byte (x8) to support data integrity for stored data.
• Endurance & Retention — Specified endurance of 100K program/erase cycles and data retention of 10 years for reliable long-term storage.
• Interface & Features — Parallel command/address/data multiplexed I/O, cache program/read, copy-back, automatic program/erase and boot-from-NAND support to simplify system boot and memory management.
• Industrial Grade & Packaging — Operating temperature range −40 °C to 85 °C; available in 48-pin TSOPI, 63-ball BGA and 67-ball BGA package options; RoHS compliant and JEDEC qualified.

Typical Applications

• Embedded Storage and Firmware — Non-volatile storage for firmware, boot code and system images where single-level reliability and ECC-protected storage are required.
• Solid-State Mass Storage — NAND-based storage applications that benefit from page-mode read, cache program/read and copy-back features to manage block-level data efficiently.
• Industrial Systems — Devices operating across −40 °C to 85 °C that require JEDEC-qualified NAND with long data retention and high program/erase endurance.

Unique Advantages

• Robust Data Integrity: ECC requirement of 4 bit/512 Byte and on-chip management features reduce the burden on host systems for error handling.
• High Endurance and Retention: 100K program/erase cycles and 10-year data retention support long-life applications and firmware stability.
• Low-Voltage Design: 1.8 V operation (1.7–1.95 V range) enables integration into modern low-power embedded platforms.
• Flexible Performance Modes: Cache program/read, copy-back and automatic page read at power-up options improve read/write throughput for streaming or sequential workloads.
• Industrial Packaging Options: Multiple package choices (TSOPI and BGA variants) and industrial temperature rating simplify BOM selection for constrained form factors and harsh environments.

Why Choose F59D1G81MB-IP(2M)?

The F59D1G81MB-IP(2M) combines SLC NAND reliability, on-chip ECC support and industrial-temperature operation to serve embedded and solid-state storage designs that demand endurance, long data retention and low-voltage operation. Its parallel x8 interface and advanced NAND features (cache program/read, copy-back, automatic program/erase) provide practical tools for optimizing system throughput and block management.

This device is well suited to engineers designing industrial firmware storage, boot memory and NAND-based mass storage where JEDEC qualification, package flexibility and long-term reliability are required.

Request a quote or submit an inquiry to receive pricing information, lead times and available package options for the F59D1G81MB-IP(2M).