F59D2G81KA (2N)

The F59D2G81KA (2N) is a 2.147 Gbit SLC NAND Flash memory device organized as 256M × 8, provided in multiple surface-mount package options. It implements single-level cell NAND architecture with a parallel memory interface and supports low-voltage 1.7 V to 1.95 V operation.

Designed for applications that require non-volatile storage with automotive-grade qualification, this device combines defined timing characteristics (25 ns access, 400 µs word/page write cycle) with broad operating temperature capability and RoHS compliance.

Key Features

• Memory Type & Capacity — 2.147 Gbit SLC NAND Flash organized as 256M × 8, providing non-volatile storage in a compact memory footprint.
• Interface — Parallel memory interface for system integration requiring conventional NAND connectivity.
• Timing — Read access time of 25 ns and a write cycle time per word/page of 400 µs, enabling predictable read/write timing in system design.
• Power — Low-voltage supply range of 1.7 V to 1.95 V (nominal 1.8 V) suitable for systems optimized for reduced power rails.
• Automotive Qualification — AEC-Q100 qualification and specified as Automotive grade, supporting use in automotive electronic designs.
• Package Options — Available in 48-pin TSOP, 63-ball BGA, and 67-ball BGA surface-mount packages to match PCB and assembly requirements.
• Temperature Range — Specified operating temperature range supports -40 °C up to 105 °C for deployment in thermally demanding environments.
• Compliance — RoHS compliant for regulatory and environmental compatibility.

Typical Applications

• Automotive electronic systems — Non-volatile storage for in-vehicle systems where AEC-Q100-qualified SLC NAND is required.
• Embedded storage — Firmware and data storage in embedded controllers that use a parallel NAND interface and operate from 1.8 V rails.
• Industrial modules — Storage in industrial electronics requiring extended operating temperature capability and surface-mount packaging options.

Unique Advantages

• AEC-Q100-qualified automotive grade — Explicit qualification for automotive designs where industry-standard component qualification is required.
• SLC NAND architecture — Single-level cell implementation in a 256M × 8 organization for straightforward byte-wide memory mapping.
• Low-voltage operation — 1.7 V to 1.95 V supply range enabling integration into 1.8 V power domains.
• Deterministic timing — 25 ns access time and 400 µs word/page write cycle provide defined performance parameters for system timing budgets.
• Multiple surface-mount packages — Choices of 48-pin TSOP, 63-ball BGA, and 67-ball BGA support different board layouts and assembly processes.
• Wide operating temperature — Rated for operation from -40 °C to 105 °C to accommodate thermally challenging environments.

Why Choose F59D2G81KA (2N)?

The F59D2G81KA (2N) positions itself as a qualified automotive-grade SLC NAND Flash device offering 2.147 Gbit capacity, parallel interface, and low-voltage 1.8 V operation. With AEC-Q100 qualification, multiple package options, and RoHS compliance, it is suited to designs that require defined timing behavior and reliable non-volatile storage across a broad temperature range.

This device is intended for engineers and procurement teams building automotive and embedded systems that need a predictable SLC NAND solution with clear electrical, timing, and packaging specifications.

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