F59D1G81MB&F59D1G161MB-IP(2M)
| Part Description |
Ind. -40~85°C, SLC NAND, 1.8V |
|---|---|
| Quantity | 934 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | 48 pin TSOPI; 48/ 63/ 67 Ball BGA | Memory Format | NAND Flash | Technology | SLC NAND Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48 pin TSOPI; 48/ 63/ 67 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1G x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81MB&F59D1G161MB-IP(2M) – Ind. -40~85°C, SLC NAND, 1.8V
The F59D1G81MB & F59D1G161MB series are industrial-grade SLC NAND flash devices providing 1.074 Gbit non-volatile storage in parallel interface configurations. Designed for industrial embedded storage, the devices deliver single-bit-per-cell SLC reliability, robust endurance and extended operating temperature support for demanding environments.
These devices support boot-from-NAND and automatic memory download functions and are offered in multiple surface-mount packages to suit system-level integration and density requirements.
Key Features
- Memory Capacity & Organization — 1.074 Gbit total capacity; organized as 1G × 8 with spare area and page/block architecture suitable for page-program and block-erase operations.
- SLC NAND Technology — Single-level cell architecture with ECC requirements specified (x8: 4bit/512Byte; x16: 4bit/256Word), 100K program/erase endurance and 10 years data retention.
- Voltage & Interface — 1.8V VCC (datasheet range 1.7 V–1.95 V) with parallel command/address/data multiplexed I/O for direct integration into embedded controllers.
- Performance — Read cycle time down to 30 ns (access time); typical program time ~300–350 µs per page and typical block erase around 4 ms for X8 devices.
- Reliability & Protection — Hardware protections including program/erase lockout during power transitions, bad-block protection and support for copy-back and cache program/read operations to optimize block management and throughput.
- Industrial Temperature Range — Guaranteed operation from −40°C to 85°C for use in industrial environments.
- Package Options — Available in surface-mount packages including 48-pin TSOPI and 48/63/67-ball BGA variants to match board-level and thermal requirements.
- Standards & Compliance — JEDEC qualification and RoHS compliant.
Typical Applications
- Industrial Embedded Storage — Reliable non-volatile storage for industrial controllers, data logging and factory automation where extended temperature range and endurance are required.
- Boot and Firmware Storage — Boot-from-NAND and automatic memory download options make these devices suitable for storing boot code and firmware images in embedded systems.
- Solid-State Mass Storage — Page/block architecture with cache and copy-back operations enables efficient storage management for solid-state applications that need durable program/erase cycles.
- High-Reliability Data Retention — Use in systems requiring long-term data retention (specified 10 years) and predictable P/E cycling for lifecycle planning.
Unique Advantages
- Industrial-grade robustness: Extended −40°C to 85°C operating range supports deployment in harsh environments.
- Proven SLC endurance: 100K program/erase cycles provide predictable lifetime for write-intensive embedded storage.
- Flexible packaging: Multiple TSOPI and BGA package options simplify BOM choices for board-space and thermal constraints.
- Built-in data management features: Cache program/read, copy-back and bad-block protection streamline defect management and improve throughput.
- Ecosystem-ready interfaces: Parallel, multiplexed command/address/data I/O and JEDEC qualification ease integration with standard controllers and toolchains.
- Compliance and sourcing confidence: RoHS compliance and JEDEC qualification support regulatory and supply-chain requirements.
Why Choose F59D1G81MB&F59D1G161MB-IP(2M)?
The F59D1G81MB & F59D1G161MB series deliver an industrial-grade SLC NAND solution that balances endurance, data retention and operational temperature range for embedded storage applications. With parallel I/O, cache and copy-back capabilities, and JEDEC qualification, these devices are positioned for systems that require reliable, long-life non-volatile memory with predictable behavior.
These parts are well suited to engineers designing industrial controllers, boot/firmware storage solutions and solid-state storage systems that need a combination of SLC reliability, package flexibility and proven memory management features.
Request a quote or submit an inquiry for pricing and availability to evaluate the F59D1G81MB & F59D1G161MB series for your next industrial storage design.
Date Founded: 1998
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