F59D1G81MB-45BIG2M

1Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 1Gbit, 1.8V, Industrial

Quantity 1,599 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page350 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G81MB-45BIG2M – SLC NAND Flash, 1Gbit, 1.8V, Industrial

The F59D1G81MB-45BIG2M is a 1.074 Gbit single-level-cell (SLC) NAND Flash memory organized as 128M × 8. It operates from a 1.8 V supply (1.7 V to 1.95 V) and provides a parallel x8 interface in a 63-ball BGA surface-mount package targeted for industrial applications.

Designed for reliable non-volatile storage, this device combines fast read access, block-level erase programmability and SLC endurance characteristics to support embedded storage and industrial systems requiring sustained program/erase cycles and extended data retention.

Key Features

  • Memory Architecture — 1.074 Gbit capacity organized as 128M × 8 with spare area ((128M + 4M) × 8bit) and a data register sized (2K + 64) × 8bit for page operations.
  • NAND SLC Technology — Single-bit-per-cell NAND Flash technology with EEPROM-style non-volatile data retention and an ECC requirement specified as 4-bit per 512 Byte for x8 devices.
  • Performance — Documented access time of 30 ns and serial access/read cycle timing options including 45 ns cycle time per byte in page mode; random read specified at 25 µs (max.).
  • Program & Erase Timing — Write/Program cycle characteristics include a word/page write cycle time of 350 µs (spec) with typical page program time reported as ~300 µs; typical block erase time is 4 ms for a 128 KByte block.
  • Page & Block Organization — x8 page program size (2K + 64) Byte and block erase size (128K + 4K) Byte, enabling block-level data management for firmware and file storage.
  • Interfaces & Operations — Command/address/data multiplexed I/O port, cache program/read and cache read support, copy-back operation, EDO mode and automatic program/erase control features including automatic page 0 read at power-up and boot-from-NAND support.
  • Reliability & Endurance — Endurance rated to 100K program/erase cycles with data retention specified at 10 years; includes bad-block protection and program/erase lockout during power transitions.
  • Power & Voltage — Single 1.8 V power supply range (1.7 V to 1.95 V) for low-voltage system integration.
  • Package & Temperature — 63-ball BGA (BGA-63) surface-mount package; Industrial grade operating temperature range from −40 °C to 85 °C and JEDEC qualification.
  • Compliance — RoHS compliant.

Typical Applications

  • Embedded Storage — File-system or firmware storage in industrial controllers and appliances where non-volatile SLC endurance and page/block management are required.
  • Industrial Automation — Program and data storage in PLCs, HMIs and factory equipment that operate across −40 °C to 85 °C and require JEDEC-qualified memory components.
  • Networking & Communications — Firmware/image storage and over-the-air update buffers where reliable program/erase cycles and boot-from-NAND capability are needed.
  • Solid-State Mass Storage — Use as a cost-effective SLC NAND device for embedded mass storage solutions requiring long data retention and high P/E endurance.

Unique Advantages

  • Industrial Temperature Range: Rated −40 °C to 85 °C for deployment in harsh environments and extended-temperature systems.
  • SLC Endurance & Retention: 100K program/erase cycles and 10-year data retention provide long-term reliability for firmware and critical data.
  • Flexible Page & Block Management: Large page size (2K + 64 bytes) and block erase architecture enable efficient large-file streaming and selective block updates.
  • Boot & System Integration Features: Supports automatic page 0 read at power-up and boot-from-NAND, simplifying system initialization and firmware boot workflows.
  • High Read Throughput Options: Cache read and cache program operations plus copy-back support improve sequential read and program throughput for streaming applications.
  • Compact Surface-Mount Package: 63-ball BGA package reduces board footprint while providing a robust surface-mount form factor for industrial PCBs.

Why Choose F59D1G81MB-45BIG2M?

The F59D1G81MB-45BIG2M positions itself as a practical SLC NAND Flash solution for industrial embedded designs that require durable non-volatile storage with JEDEC qualification and RoHS compliance. Its combination of SLC endurance, explicit timing figures, power requirements and industrial temperature rating make it suitable for applications that demand predictable program/erase life and long data retention.

This device is well suited to engineers and procurement teams designing firmware storage, embedded mass storage and industrial systems that need a compact BGA package, low-voltage operation and NAND-specific features such as cache program/read, copy-back and bad-block management.

Request a quote or submit a purchase inquiry to obtain pricing, availability and ordering information for the F59D1G81MB-45BIG2M.

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