F59D1G81MB-45BCIG2M
| Part Description |
SLC NAND Flash, 1Gbit, (128Mx8), 1.8V, x8, 45ns, 67-ball BGA, Industrial |
|---|---|
| Quantity | 1,733 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81MB-45BCIG2M – SLC NAND Flash, 1Gbit, (128Mx8), 1.8V, x8, 45ns, 67-ball BGA, Industrial
The F59D1G81MB-45BCIG2M from ESMT is a 1.074 Gbit SLC NAND Flash memory organized as 128M x 8 (with spare capacity) in a 67-ball BGA surface-mount package. It operates from a 1.8V supply (1.7 V to 1.95 V) with a parallel x8 interface and is specified for industrial temperature operation (−40°C to 85°C) and JEDEC qualification.
Built for solid-state mass storage and embedded boot/firmware applications, this device combines SLC endurance and data retention with fast page-mode read/program capabilities and on-chip reliability features such as hardware data protection, ECC guidance, cache program/read and copy-back operations.
Key Features
- Memory Core & Organization — 1.074 Gbit SLC NAND Flash organized as (128M + 4M) × 8-bit with a data register of (2K + 64) × 8-bit and page size (2K + 64) bytes for x8 devices.
- Read & Access Performance — Serial access cycle time of 45 ns per byte (datasheet page-mode), with Random Read performance listed at 25 µs (max.). The part is offered in a 45 ns speed grade.
- Program & Erase Timing — Typical page program time ≈ 300 µs; typical block erase time ≈ 4 ms. Write cycle time (word/page) is specified at 350 µs.
- Endurance & Retention — Endurance rated at 100K program/erase cycles with typical data retention of 10 years.
- Interface & Operational Features — Parallel command/address/data multiplexed I/O port, copy-back operation, cache program/read, EDO mode, automatic page-0 read at power-up option, boot-from-NAND support and automatic memory download.
- Reliability & Data Protection — Hardware data protection, program/erase lockout during power transitions, and ECC guidance (x8: 4-bit/512 Byte) to support reliable data storage.
- Power & Packaging — 1.8V supply (operating range 1.7 V–1.95 V); surface-mount 67-ball BGA package (BGA-67) for compact board-level integration.
- Operating Range & Compliance — Industrial temperature range −40°C to 85°C and JEDEC qualification; RoHS compliant.
Typical Applications
- Solid-State Mass Storage — High-reliability SLC NAND architecture and block-level erase make it suitable for embedded storage applications where durability and data retention are required.
- Boot & System Firmware Storage — Boot-from-NAND support, automatic page-0 read at power-up and automatic memory download enable reliable storage of boot code and firmware images.
- Industrial Control & Data Logging — Industrial-grade temperature range and JEDEC qualification support use in factory automation, PLCs and data-logging systems requiring robust non-volatile memory.
- Embedded Systems Requiring Long-Life Storage — Endurance (100K P/E cycles) and 10-year retention address long-term fielded applications and maintenance cycles.
Unique Advantages
- SLC Endurance: 100K program/erase cycles and 10-year data retention provide a durable foundation for long-life storage applications.
- Industrial Temperature Rating: Specified −40°C to 85°C operation meets the environmental demands of industrial deployments.
- Low-Voltage Operation: 1.8V supply (1.7 V–1.95 V) supports lower-power system designs where 1.8V domains are used.
- High Throughput Features: Cache program/read and copy-back operations combined with 45 ns serial access cycle time improve sustained read/write throughput for streamed data.
- On-Device Protection: Hardware data protection and program/erase lockout during power transitions reduce risk of data corruption during unstable power events.
- Compact BGA Package: 67-ball BGA (surface mount) minimizes board footprint while supporting high-density system layouts.
Why Choose F59D1G81MB-45BCIG2M?
The F59D1G81MB-45BCIG2M positions itself as a rugged, industrial-grade SLC NAND Flash solution combining proven endurance and retention with practical performance features for embedded and storage-focused designs. JEDEC qualification, on-chip reliability mechanisms and a compact 67-ball BGA package make it suitable for designs that require durable, compact non-volatile memory.
This device is well suited to engineers specifying memory for industrial controllers, embedded systems that need reliable boot/firmware storage, and solid-state mass storage implementations where long-term data integrity and operational temperature range are critical.
Request a quote or submit a sales inquiry for the F59D1G81MB-45BCIG2M to receive pricing, availability and technical support information tailored to your project requirements.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A