F59D1G81MB-45BCIG2M

1Gb NAND Flash Ind.
Part Description

SLC NAND Flash, 1Gbit, (128Mx8), 1.8V, x8, 45ns, 67-ball BGA, Industrial

Quantity 1,733 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page350 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G81MB-45BCIG2M – SLC NAND Flash, 1Gbit, (128Mx8), 1.8V, x8, 45ns, 67-ball BGA, Industrial

The F59D1G81MB-45BCIG2M from ESMT is a 1.074 Gbit SLC NAND Flash memory organized as 128M x 8 (with spare capacity) in a 67-ball BGA surface-mount package. It operates from a 1.8V supply (1.7 V to 1.95 V) with a parallel x8 interface and is specified for industrial temperature operation (−40°C to 85°C) and JEDEC qualification.

Built for solid-state mass storage and embedded boot/firmware applications, this device combines SLC endurance and data retention with fast page-mode read/program capabilities and on-chip reliability features such as hardware data protection, ECC guidance, cache program/read and copy-back operations.

Key Features

  • Memory Core & Organization — 1.074 Gbit SLC NAND Flash organized as (128M + 4M) × 8-bit with a data register of (2K + 64) × 8-bit and page size (2K + 64) bytes for x8 devices.
  • Read & Access Performance — Serial access cycle time of 45 ns per byte (datasheet page-mode), with Random Read performance listed at 25 µs (max.). The part is offered in a 45 ns speed grade.
  • Program & Erase Timing — Typical page program time ≈ 300 µs; typical block erase time ≈ 4 ms. Write cycle time (word/page) is specified at 350 µs.
  • Endurance & Retention — Endurance rated at 100K program/erase cycles with typical data retention of 10 years.
  • Interface & Operational Features — Parallel command/address/data multiplexed I/O port, copy-back operation, cache program/read, EDO mode, automatic page-0 read at power-up option, boot-from-NAND support and automatic memory download.
  • Reliability & Data Protection — Hardware data protection, program/erase lockout during power transitions, and ECC guidance (x8: 4-bit/512 Byte) to support reliable data storage.
  • Power & Packaging — 1.8V supply (operating range 1.7 V–1.95 V); surface-mount 67-ball BGA package (BGA-67) for compact board-level integration.
  • Operating Range & Compliance — Industrial temperature range −40°C to 85°C and JEDEC qualification; RoHS compliant.

Typical Applications

  • Solid-State Mass Storage — High-reliability SLC NAND architecture and block-level erase make it suitable for embedded storage applications where durability and data retention are required.
  • Boot & System Firmware Storage — Boot-from-NAND support, automatic page-0 read at power-up and automatic memory download enable reliable storage of boot code and firmware images.
  • Industrial Control & Data Logging — Industrial-grade temperature range and JEDEC qualification support use in factory automation, PLCs and data-logging systems requiring robust non-volatile memory.
  • Embedded Systems Requiring Long-Life Storage — Endurance (100K P/E cycles) and 10-year retention address long-term fielded applications and maintenance cycles.

Unique Advantages

  • SLC Endurance: 100K program/erase cycles and 10-year data retention provide a durable foundation for long-life storage applications.
  • Industrial Temperature Rating: Specified −40°C to 85°C operation meets the environmental demands of industrial deployments.
  • Low-Voltage Operation: 1.8V supply (1.7 V–1.95 V) supports lower-power system designs where 1.8V domains are used.
  • High Throughput Features: Cache program/read and copy-back operations combined with 45 ns serial access cycle time improve sustained read/write throughput for streamed data.
  • On-Device Protection: Hardware data protection and program/erase lockout during power transitions reduce risk of data corruption during unstable power events.
  • Compact BGA Package: 67-ball BGA (surface mount) minimizes board footprint while supporting high-density system layouts.

Why Choose F59D1G81MB-45BCIG2M?

The F59D1G81MB-45BCIG2M positions itself as a rugged, industrial-grade SLC NAND Flash solution combining proven endurance and retention with practical performance features for embedded and storage-focused designs. JEDEC qualification, on-chip reliability mechanisms and a compact 67-ball BGA package make it suitable for designs that require durable, compact non-volatile memory.

This device is well suited to engineers specifying memory for industrial controllers, embedded systems that need reliable boot/firmware storage, and solid-state mass storage implementations where long-term data integrity and operational temperature range are critical.

Request a quote or submit a sales inquiry for the F59D1G81MB-45BCIG2M to receive pricing, availability and technical support information tailored to your project requirements.

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