F59D1G81MB-45TIG2M
| Part Description |
SLC NAND Flash, 1 Gbit, 1.8 V, x8, 45 ns, Industrial |
|---|---|
| Quantity | 684 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81MB-45TIG2M – SLC NAND Flash, 1 Gbit, 1.8 V, x8, 45 ns, Industrial
The F59D1G81MB-45TIG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8, designed for industrial-grade applications. It implements a 1.8 V (1.7 V–1.95 V) parallel NAND interface with command/address/data multiplexed I/O, and is offered in a 48-pin TSOPI surface-mount package.
Targeted at solid-state mass storage and embedded systems requiring reliable non-volatile storage, this device delivers fast read/write cycles with on-chip features that support boot and high-throughput program/read operations while meeting JEDEC qualification and RoHS compliance.
Key Features
- Memory Core 1.074 Gbit SLC NAND organized as 128M × 8 with spare capacity ((128M + 4M) × 8). Endurance is specified at 100K program/erase cycles with 10 years data retention.
- Performance Fast read capability with an access time listed as 30 ns (specification) and page-mode data read supported at a 45 ns cycle time per byte; random read response up to 25 µs (max.).
- Program & Erase Typical page program time is 300 µs with a write-cycle timing listed at 350 µs; typical block erase time is 4 ms for a 128 KB block (x8 device).
- Interface & Architecture Parallel NAND interface with command/address/data multiplexed I/O ports, cache program/read, copy-back operation and EDO mode to improve throughput and data handling.
- Reliability & Data Integrity Hardware data protection features including program/erase lockout during power transitions, bad-block protection, One Time Program (OTP) option, and ECC guidance (x8: 4 bit/512 Byte).
- Power & Supply Low-voltage operation at 1.8 V nominal (operating range 1.7 V–1.95 V) suitable for low-power system designs.
- Package & Temperature Available in a Pb-free 48-pin TSOPI (TSOPI-48) surface-mount package with industrial operating temperature range −40°C to +85°C and JEDEC qualification.
- System Features Boot-from-NAND support, automatic page 0 read at power-up option, automatic memory download, cache and copy-back functions to facilitate system boot and firmware update workflows.
Typical Applications
- Industrial Solid-State Storage — Reliable non-volatile storage for industrial controllers and data storage appliances where SLC endurance and 10-year retention are required.
- Embedded Systems & Boot Memory — Supports boot-from-NAND and automatic page read at power-up for firmware storage and system boot applications.
- High-Throughput Program/Read Workloads — Cache program/read and copy-back features improve throughput when streaming consecutive pages or performing large file writes.
Unique Advantages
- High Endurance SLC Technology: 100K program/erase cycles and 10 years data retention provide long operational life for demanding applications.
- Low-Voltage Operation: 1.7 V–1.95 V supply range supports low-power system designs and standard 1.8 V platforms.
- Boot and System Integration Features: Boot-from-NAND, automatic page 0 read at power-up, and automatic memory download simplify firmware deployment and system initialization.
- Performance Enhancements: Cache program/read, copy-back operation, and EDO mode increase effective throughput for sequential and pipelined operations.
- Industrial-Grade Reliability: JEDEC qualification, RoHS compliance, and an operating range of −40°C to +85°C support deployment in industrial environments.
- Flexible Packaging: 48-pin TSOPI surface-mount package suitable for compact PCB layouts and automated assembly.
Why Choose F59D1G81MB-45TIG2M?
The F59D1G81MB-45TIG2M combines SLC NAND endurance and retention with features tailored for embedded and industrial storage systems—fast read/write timings, cache and copy-back operations, and boot support that simplify firmware and data management. Its low-voltage 1.8 V operation, JEDEC qualification, and industrial temperature rating make it well suited for designs that require long-term reliability and predictable behavior.
Choose this device for industrial applications and embedded designs that need robust non-volatile storage, firmware boot capability, and performance-oriented NAND features packed into a compact TSOPI-48 surface-mount package.
Request a quote or submit an inquiry to receive pricing and lead-time information for the F59D1G81MB-45TIG2M and discuss availability for your production needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A