F59D1G81MB-45TG2M
| Part Description |
SLC NAND Flash, 1Gbit (128M x 8), 1.8V, x8, 48-pin TSOPI |
|---|---|
| Quantity | 1,325 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81MB-45TG2M – SLC NAND Flash, 1Gbit (128M x 8), 1.8V, x8, 48-pin TSOPI
The F59D1G81MB-45TG2M is a 1 Gbit single-level cell (SLC) NAND flash device organized as 128M x 8 with an additional 4M x 8 spare area. It operates from a low-voltage 1.8V supply (1.7 V to 1.95 V) and provides a parallel x8 interface in a 48-pin TSOPI package.
Designed for solid-state mass storage and embedded boot/firmware storage, this device provides SLC endurance and data retention characteristics along with NAND features such as cache program/read, copy-back, Boot-from-NAND support and automatic memory download to support embedded system storage and firmware workflows.
Key Features
- Core / Memory Organization 1.074 Gbit total capacity organized as 128M × 8 with an extra 4M × 8 spare area; device contains 1,024 blocks divided into pages and blocks for independent erase operations.
- Page & Block Sizes x8 page size: (2K + 64) bytes per page; block size for x8 devices: (128K + 4K) bytes.
- Performance -45 speed grade: 45 ns cycle time per byte in page-mode reads. Typical page program time ~300 µs and typical block erase time ~4 ms. Random read: 25 µs (max) for specified operations in the datasheet.
- Program / Erase Endurance & Retention Endurance: 100K program/erase cycles. Data retention: 10 years.
- Power Single 1.8V VCC operation (specified range 1.7 V to 1.95 V) for low-voltage system integration.
- Interface & Modes Parallel command/address/data multiplexed I/O port with cache program/read, copy-back, EDO mode, and NOP support for pipelined operations and improved throughput.
- System Reliability & Protection Hardware data protection including program/erase lockout during power transitions, bad-block protect, and One-Time-Program (OTP) operation. ECC requirement for x8: 4-bit per 512-byte.
- Package & Grade Surface-mount 48-pin TSOPI package; commercial grade with operating temperature 0 °C to 70 °C and RoHS-compliant construction.
Typical Applications
- Solid-state mass storage — SLC architecture and block-oriented erase/program operations suit mass storage applications requiring endurance and long data retention.
- Boot and firmware storage for embedded systems — Built-in Boot-from-NAND support and automatic memory download enable reliable system boot and firmware update workflows.
- Firmware image storage and secure one-time data — OTP operation and spare-area organization support firmware images and one-time programming scenarios.
- Commercial consumer and industrial devices — Low-voltage 1.8V operation and a compact 48-pin TSOPI package enable integration into space-constrained commercial designs within the 0 °C to 70 °C range.
Unique Advantages
- SLC endurance and retention: 100K program/erase cycles and 10-year data retention support long-lived storage requirements.
- Low-voltage operation: 1.8V supply range (1.7–1.95 V) enables reduced power system designs and compatibility with low-voltage platforms.
- High-efficiency program/read features: Cache program/read and copy-back operations allow pipelined programming and improved throughput for sustained data transfers.
- Robust data-protection features: Hardware program/erase lockout during power transitions, bad-block protection and specified ECC requirements help maintain data integrity.
- Compact commercial package: 48-pin TSOPI surface-mount package for compact board layouts and straightforward assembly.
Why Choose F59D1G81MB-45TG2M?
The F59D1G81MB-45TG2M is positioned for designers who need 1 Gbit of reliable SLC NAND storage in a low-voltage, compact TSOPI package. Its SLC endurance, 10-year retention, and system-oriented features such as cache programming, copy-back, Boot-from-NAND and automatic memory download make it suitable for embedded systems that require robust firmware and mass-storage handling.
This device is well-suited to commercial embedded designs that demand low-voltage operation, predictable program/erase timing, and in-system features to simplify firmware distribution and boot procedures. The combination of endurance, data-protection capabilities and standardized package options supports long-term integration and predictable supply-chain selection.
Request a quote or submit an inquiry to purchase the F59D1G81MB-45TG2M for evaluation or production needs.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A