F59D1G81MB-45TG2M

1Gb NAND Flash
Part Description

SLC NAND Flash, 1Gbit (128M x 8), 1.8V, x8, 48-pin TSOPI

Quantity 1,325 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page350 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G81MB-45TG2M – SLC NAND Flash, 1Gbit (128M x 8), 1.8V, x8, 48-pin TSOPI

The F59D1G81MB-45TG2M is a 1 Gbit single-level cell (SLC) NAND flash device organized as 128M x 8 with an additional 4M x 8 spare area. It operates from a low-voltage 1.8V supply (1.7 V to 1.95 V) and provides a parallel x8 interface in a 48-pin TSOPI package.

Designed for solid-state mass storage and embedded boot/firmware storage, this device provides SLC endurance and data retention characteristics along with NAND features such as cache program/read, copy-back, Boot-from-NAND support and automatic memory download to support embedded system storage and firmware workflows.

Key Features

  • Core / Memory Organization 1.074 Gbit total capacity organized as 128M × 8 with an extra 4M × 8 spare area; device contains 1,024 blocks divided into pages and blocks for independent erase operations.
  • Page & Block Sizes x8 page size: (2K + 64) bytes per page; block size for x8 devices: (128K + 4K) bytes.
  • Performance -45 speed grade: 45 ns cycle time per byte in page-mode reads. Typical page program time ~300 µs and typical block erase time ~4 ms. Random read: 25 µs (max) for specified operations in the datasheet.
  • Program / Erase Endurance & Retention Endurance: 100K program/erase cycles. Data retention: 10 years.
  • Power Single 1.8V VCC operation (specified range 1.7 V to 1.95 V) for low-voltage system integration.
  • Interface & Modes Parallel command/address/data multiplexed I/O port with cache program/read, copy-back, EDO mode, and NOP support for pipelined operations and improved throughput.
  • System Reliability & Protection Hardware data protection including program/erase lockout during power transitions, bad-block protect, and One-Time-Program (OTP) operation. ECC requirement for x8: 4-bit per 512-byte.
  • Package & Grade Surface-mount 48-pin TSOPI package; commercial grade with operating temperature 0 °C to 70 °C and RoHS-compliant construction.

Typical Applications

  • Solid-state mass storage — SLC architecture and block-oriented erase/program operations suit mass storage applications requiring endurance and long data retention.
  • Boot and firmware storage for embedded systems — Built-in Boot-from-NAND support and automatic memory download enable reliable system boot and firmware update workflows.
  • Firmware image storage and secure one-time data — OTP operation and spare-area organization support firmware images and one-time programming scenarios.
  • Commercial consumer and industrial devices — Low-voltage 1.8V operation and a compact 48-pin TSOPI package enable integration into space-constrained commercial designs within the 0 °C to 70 °C range.

Unique Advantages

  • SLC endurance and retention: 100K program/erase cycles and 10-year data retention support long-lived storage requirements.
  • Low-voltage operation: 1.8V supply range (1.7–1.95 V) enables reduced power system designs and compatibility with low-voltage platforms.
  • High-efficiency program/read features: Cache program/read and copy-back operations allow pipelined programming and improved throughput for sustained data transfers.
  • Robust data-protection features: Hardware program/erase lockout during power transitions, bad-block protection and specified ECC requirements help maintain data integrity.
  • Compact commercial package: 48-pin TSOPI surface-mount package for compact board layouts and straightforward assembly.

Why Choose F59D1G81MB-45TG2M?

The F59D1G81MB-45TG2M is positioned for designers who need 1 Gbit of reliable SLC NAND storage in a low-voltage, compact TSOPI package. Its SLC endurance, 10-year retention, and system-oriented features such as cache programming, copy-back, Boot-from-NAND and automatic memory download make it suitable for embedded systems that require robust firmware and mass-storage handling.

This device is well-suited to commercial embedded designs that demand low-voltage operation, predictable program/erase timing, and in-system features to simplify firmware distribution and boot procedures. The combination of endurance, data-protection capabilities and standardized package options supports long-term integration and predictable supply-chain selection.

Request a quote or submit an inquiry to purchase the F59D1G81MB-45TG2M for evaluation or production needs.

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