F59D1G81LB-45TIG2M
| Part Description |
SLC NAND Flash, 1.0 Gbit, 1.8V, x8, 45 ns, Industrial |
|---|---|
| Quantity | 1,246 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81LB-45TIG2M – SLC NAND Flash, 1.0 Gbit, 1.8V, x8, 45 ns, Industrial
The F59D1G81LB-45TIG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory organized as 128M × 8. Designed for industrial applications, it provides a parallel NAND interface with command/address/data multiplexed I/O and supports boot-from-NAND and automatic memory download operations.
With 1.8V operation (1.7 V to 1.95 V), industrial temperature grading (−40°C to 85°C), and JEDEC qualification, this device targets solid-state mass storage and embedded systems requiring reliable, long‑life non-volatile storage and predictable program/erase behavior.
Key Features
- Core & Memory Organization 128M × 8 organization with spare area (memory cell array: (128M + 4M) × 8 bit) and data register ((2K + 64) × 8 byte) for page-oriented operations.
- Page and Block Structure x8 page size: (2K + 64) bytes; block erase size: (128K + 4K) bytes.
- Performance Specified access time: 30 ns; serial/page read cycle time documented at 45 ns per byte with random read up to 25 µs; typical page program time ~300 µs and typical block erase time ~4 ms.
- SLC Reliability Endurance of 60K program/erase cycles and data retention of 10 years as documented for the series.
- Error Management ECC requirement for x8 devices: 1 bit per 512 bytes; hardware data protection and bad-block-protect features included.
- Advanced Flash Functions Cache program/read, copy‑back operation, automatic program/erase, automatic page 0 read at power-up, EDO mode, and one-time program (OTP) capability.
- Power & Interface 1.8V supply range (1.7 V to 1.95 V); parallel NAND interface with command/address/data multiplexed I/O.
- Package & Temperature 48-pin TSOPI (TSOPI-48) surface-mount package; industrial operating temperature −40°C to 85°C; JEDEC qualified; RoHS compliant.
Typical Applications
- Solid‑State Storage High‑reliability SLC NAND for storage subsystems where endurance and long data retention are required.
- Embedded Systems & Boot Memory Boot-from-NAND support and automatic page 0 read at power-up make this device suitable for system firmware storage and startup code.
- Industrial Control & Automation JEDEC qualification and −40°C to 85°C operation support deployment in industrial controllers, HMI devices, and PLC systems.
- Data Logging and Instrumentation Long retention and high program/erase endurance suit applications that require reliable non-volatile event logging or measurement storage.
Unique Advantages
- SLC Endurance and Retention: 60K program/erase cycles and a 10-year data retention specification provide predictable lifecycle performance for long-lived products.
- Low‑Voltage Operation: 1.8V nominal supply (1.7 V–1.95 V) enables compatibility with low-voltage system domains and reduces overall power budget where applicable.
- Performance Features for Throughput: Cache program/read and copy-back operations allow pipelined programming and faster sequential page streaming for high-throughput write/read scenarios.
- System Boot and Integration: Automatic page 0 read at power-up and boot-from-NAND support simplify system initialization and firmware deployment.
- Industrial Grade Packaging: Available in a 48-pin TSOPI surface-mount package with an industrial temperature range for robust board-level integration.
- Standards and Compliance: JEDEC qualification and RoHS compliance support regulated and industrial procurement requirements.
Why Choose F59D1G81LB-45TIG2M?
The F59D1G81LB-45TIG2M combines SLC NAND endurance and retention with a proven set of flash management features—cache program/read, copy-back, bad-block protection, and ECC guidance—making it a practical choice for embedded and industrial storage designs that need predictable long-term behavior. Its 1.8V operation, JEDEC qualification, and industrial temperature rating make it suitable for applications where environmental resilience and standards compliance matter.
This device is well suited for designers building solid-state storage, system boot memory, or high-reliability data-logging solutions that require clear program/erase performance characteristics and industry-grade robustness backed by established flash features.
Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the F59D1G81LB-45TIG2M.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A