F59D1G81LB-45TG2M

1Gb NAND Flash
Part Description

SLC NAND Flash, 1 Gbit, 1.8V, x8, 45 ns, 48-pin TSOPI

Quantity 839 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page350 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G81LB-45TG2M – SLC NAND Flash, 1 Gbit, 1.8V, x8, 45 ns, 48-pin TSOPI

The F59D1G81LB-45TG2M is a 1 Gbit SLC NAND flash memory organized as 128M × 8 with an additional 4M × 8 spare area. Designed for 1.8V operation (1.7 V to 1.95 V), this parallel-interface NAND device targets solid-state mass storage and embedded storage applications that require non-volatile, block-erasable memory with cache and copy-back capabilities.

With features such as automatic program/erase, cache program/read, boot-from-NAND support and hardware data protection, the device delivers a balance of endurance, retention and system-level read/write throughput in a compact 48-pin TSOPI surface-mount package.

Key Features

  • Memory Core & Organization 1.074 Gbit total capacity organized as 128M × 8 (plus 4M × 8 spare). Page size for x8 devices is (2K + 64) bytes and block size is (128K + 4K) bytes.
  • Performance Data read cycle time per byte documented at 45 ns in the series datasheet; random page read up to 25 µs (max). AccessTime is listed as 30 ns in product specifications.
  • Program & Erase Timing Typical page program time ~300 µs (datasheet); Write cycle time (word/page) listed as 350 µs in product specifications. Typical block erase time ~4 ms (datasheet).
  • Endurance & Retention Endurance rated to 60K program/erase cycles with data retention specified at 10 years.
  • Interface & Operation Parallel NAND interface with command/address/data multiplexed I/O, cache program/read, copy-back operation and EDO mode. Boot-from-NAND and automatic page-0 read at power-up options supported.
  • Power Single 1.8V supply range: 1.7 V to 1.95 V.
  • Reliability & Protection Hardware data protection features, program/erase lockout during power transitions, bad-block-protect and one-time-program (OTP) operation. ECC requirement documented: x8 – 1 bit/512 Byte.
  • Package & Temperature Surface-mount TSOPI-48 package (48-pin TSOPI). Commercial operating temperature: 0 °C to 70 °C. RoHS compliant.

Typical Applications

  • Solid-State Storage Suitable for mass storage devices and removable/embedded flash where block-erasable non-volatile memory is required.
  • Embedded Systems Boot Memory Boot-from-NAND support and automatic page-0 read at power-up make this device suitable as primary or supplemental boot storage in embedded platforms.
  • Data Logging & Media Storage Cache program and cache read features accelerate sequential write/read throughput for logging, media streaming and file storage applications.

Unique Advantages

  • SLC Endurance and Retention: 1-bit-per-cell SLC architecture with 60K program/erase cycles and 10-year data retention for long-term reliability in commercial applications.
  • Efficient Low-Voltage Operation: 1.8V supply range (1.7 V–1.95 V) reduces power-domain complexity for designs already using 1.8V systems.
  • Throughput-Enhancing Cache & Copy-Back: Cache program/read and copy-back operations improve program/read throughput and minimize data-transfer overhead during block management.
  • Compact, Surface-Mount Package: TSOPI-48 package provides a compact footprint for space-constrained PCBs while maintaining a parallel NAND interface for simple integration.
  • Built-in System Protections: Hardware data protection and program/erase lockout during power transitions help safeguard data integrity during unstable power events.

Why Choose F59D1G81LB-45TG2M?

The F59D1G81LB-45TG2M combines SLC reliability and endurance with NAND-specific features—cache program/read, copy-back, OTP and boot support—making it well suited for embedded storage and solid-state applications where durability and predictable retention are important. Its 1.8V operation and compact TSOPI-48 package ease integration into existing 1.8V system designs while providing verified program/erase performance and documented ECC requirements.

Engineers and procurement teams looking for a commercially graded NAND flash with clear timing, endurance and interface specifications will find this device aligned with standard storage and boot-use scenarios, backed by manufacturer documentation from ESMT.

Request a quote or submit a procurement inquiry to begin sourcing F59D1G81LB-45TG2M for your next design.

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