F59D1G81LB-45TG2M
| Part Description |
SLC NAND Flash, 1 Gbit, 1.8V, x8, 45 ns, 48-pin TSOPI |
|---|---|
| Quantity | 839 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81LB-45TG2M – SLC NAND Flash, 1 Gbit, 1.8V, x8, 45 ns, 48-pin TSOPI
The F59D1G81LB-45TG2M is a 1 Gbit SLC NAND flash memory organized as 128M × 8 with an additional 4M × 8 spare area. Designed for 1.8V operation (1.7 V to 1.95 V), this parallel-interface NAND device targets solid-state mass storage and embedded storage applications that require non-volatile, block-erasable memory with cache and copy-back capabilities.
With features such as automatic program/erase, cache program/read, boot-from-NAND support and hardware data protection, the device delivers a balance of endurance, retention and system-level read/write throughput in a compact 48-pin TSOPI surface-mount package.
Key Features
- Memory Core & Organization 1.074 Gbit total capacity organized as 128M × 8 (plus 4M × 8 spare). Page size for x8 devices is (2K + 64) bytes and block size is (128K + 4K) bytes.
- Performance Data read cycle time per byte documented at 45 ns in the series datasheet; random page read up to 25 µs (max). AccessTime is listed as 30 ns in product specifications.
- Program & Erase Timing Typical page program time ~300 µs (datasheet); Write cycle time (word/page) listed as 350 µs in product specifications. Typical block erase time ~4 ms (datasheet).
- Endurance & Retention Endurance rated to 60K program/erase cycles with data retention specified at 10 years.
- Interface & Operation Parallel NAND interface with command/address/data multiplexed I/O, cache program/read, copy-back operation and EDO mode. Boot-from-NAND and automatic page-0 read at power-up options supported.
- Power Single 1.8V supply range: 1.7 V to 1.95 V.
- Reliability & Protection Hardware data protection features, program/erase lockout during power transitions, bad-block-protect and one-time-program (OTP) operation. ECC requirement documented: x8 – 1 bit/512 Byte.
- Package & Temperature Surface-mount TSOPI-48 package (48-pin TSOPI). Commercial operating temperature: 0 °C to 70 °C. RoHS compliant.
Typical Applications
- Solid-State Storage Suitable for mass storage devices and removable/embedded flash where block-erasable non-volatile memory is required.
- Embedded Systems Boot Memory Boot-from-NAND support and automatic page-0 read at power-up make this device suitable as primary or supplemental boot storage in embedded platforms.
- Data Logging & Media Storage Cache program and cache read features accelerate sequential write/read throughput for logging, media streaming and file storage applications.
Unique Advantages
- SLC Endurance and Retention: 1-bit-per-cell SLC architecture with 60K program/erase cycles and 10-year data retention for long-term reliability in commercial applications.
- Efficient Low-Voltage Operation: 1.8V supply range (1.7 V–1.95 V) reduces power-domain complexity for designs already using 1.8V systems.
- Throughput-Enhancing Cache & Copy-Back: Cache program/read and copy-back operations improve program/read throughput and minimize data-transfer overhead during block management.
- Compact, Surface-Mount Package: TSOPI-48 package provides a compact footprint for space-constrained PCBs while maintaining a parallel NAND interface for simple integration.
- Built-in System Protections: Hardware data protection and program/erase lockout during power transitions help safeguard data integrity during unstable power events.
Why Choose F59D1G81LB-45TG2M?
The F59D1G81LB-45TG2M combines SLC reliability and endurance with NAND-specific features—cache program/read, copy-back, OTP and boot support—making it well suited for embedded storage and solid-state applications where durability and predictable retention are important. Its 1.8V operation and compact TSOPI-48 package ease integration into existing 1.8V system designs while providing verified program/erase performance and documented ECC requirements.
Engineers and procurement teams looking for a commercially graded NAND flash with clear timing, endurance and interface specifications will find this device aligned with standard storage and boot-use scenarios, backed by manufacturer documentation from ESMT.
Request a quote or submit a procurement inquiry to begin sourcing F59D1G81LB-45TG2M for your next design.
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