F59D1G81LB-45BCG2M

1Gb NAND Flash
Part Description

SLC NAND Flash, 1Gbit, 1.8V, x8, 45ns, 67-ball BGA

Quantity 649 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-67Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page350 µsPackaging67-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization128M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G81LB-45BCG2M – SLC NAND Flash, 1Gbit, 1.8V, x8, 45ns, 67-ball BGA

The F59D1G81LB-45BCG2M is a 1.074 Gbit Single-Level Cell (SLC) NAND flash device organized as 128M × 8, optimized for 1.8 V system environments. It implements a parallel NAND architecture with command/address/data multiplexed I/O and is intended for solid-state mass storage and embedded boot/firmware storage where reliable non-volatile memory is required.

Designed with features such as automatic program/erase, cache program/read and copy-back operations, this device supports efficient block management and streaming of consecutive pages to improve read and write throughput in space-constrained designs. The device is offered in a 67-ball BGA (BGA-67) surface-mount package for compact board integration.

Key Features

  • Memory Architecture — 1.074 Gbit capacity organized as 128M × 8 with an extra 4M × 8 spare area and a (2K + 64) byte page size for the x8 configuration.
  • Voltage and Power — 1.8 V nominal operation with an allowed supply range of 1.7 V to 1.95 V, suitable for low-voltage embedded systems.
  • Read and Access Performance — Page-mode read cycle time of 45 ns per byte as documented for the series; the product data includes an access time specification of 30 ns.
  • Program and Erase Timing — Typical page program time of 300 µs and typical block erase time of 4 ms (x8 device); write-cycle timing is listed as 350 µs in product specifications.
  • Random and Serial Read — Random read latency up to 25 µs (max) and serial access characteristics documented for high-throughput streaming.
  • Reliability and Endurance — Endurance rated at 60K program/erase cycles with data retention of 10 years; ECC requirement documented as 1 bit/512 bytes for x8 devices.
  • Advanced NAND Features — Cache program/read, copy-back, automatic page 0 read at power-up, boot-from-NAND support, automatic memory download, bad-block protection and one-time program (OTP) operation.
  • Package and Temperature — 67-ball BGA (BGA-67) surface-mount package; commercial operating temperature range 0 °C to 70 °C. RoHS compliant.

Typical Applications

  • Solid-State Mass Storage — Use for embedded mass storage where SLC endurance and predictable erase/program behavior are required.
  • Firmware and Boot Storage — Supports boot-from-NAND and automatic page 0 read at power-up to simplify system boot and firmware retrieval.
  • Embedded Consumer and Industrial Devices — 1.8 V operation and compact BGA-67 packaging suit space-constrained embedded platforms within the commercial temperature range.
  • Streaming Read/Write Systems — Cache read/program and copy-back capabilities enable efficient streaming of consecutive pages for data logging and media applications.

Unique Advantages

  • Low-Voltage Operation: 1.7 V–1.95 V supply range enables integration into 1.8 V system rails.
  • SLC Endurance and Retention: 60K program/erase cycles and 10-year data retention provide long-lived non-volatile storage for firmware and critical data.
  • Performance Features: Cache program/read and copy-back operations reduce programming overhead and improve throughput for sequential writes and reads.
  • Compact Surface-Mount Package: BGA-67 package provides a small footprint for dense board layouts while supporting the device’s parallel interface.
  • Hardware Data Protection: Program/erase lockout during power transitions and bad-block protection help maintain data integrity in system power events.
  • Commercial-Grade Availability: Commercial operating range (0 °C to 70 °C) and RoHS compliance for standard embedded and consumer product applications.

Why Choose F59D1G81LB-45BCG2M?

The F59D1G81LB-45BCG2M balances SLC NAND reliability and endurance with features tailored for embedded mass storage and boot applications. Its 1.8 V operation, cache and copy-back capabilities, and documented program/erase characteristics make it well suited for designs that need predictable performance and robust block management.

Backed by ESMT’s NAND feature set—including automatic page read at power-up, boot support, and OTP options—this device is appropriate for engineers and procurement teams specifying compact, reliable non-volatile storage solutions for consumer and industrial embedded systems operating within commercial temperature limits.

Request a quote or submit a procurement inquiry to receive pricing, availability, and ordering information for the F59D1G81LB-45BCG2M.

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