F59D1G81LB-45BCG2M
| Part Description |
SLC NAND Flash, 1Gbit, 1.8V, x8, 45ns, 67-ball BGA |
|---|---|
| Quantity | 649 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-67 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 67-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G81LB-45BCG2M – SLC NAND Flash, 1Gbit, 1.8V, x8, 45ns, 67-ball BGA
The F59D1G81LB-45BCG2M is a 1.074 Gbit Single-Level Cell (SLC) NAND flash device organized as 128M × 8, optimized for 1.8 V system environments. It implements a parallel NAND architecture with command/address/data multiplexed I/O and is intended for solid-state mass storage and embedded boot/firmware storage where reliable non-volatile memory is required.
Designed with features such as automatic program/erase, cache program/read and copy-back operations, this device supports efficient block management and streaming of consecutive pages to improve read and write throughput in space-constrained designs. The device is offered in a 67-ball BGA (BGA-67) surface-mount package for compact board integration.
Key Features
- Memory Architecture — 1.074 Gbit capacity organized as 128M × 8 with an extra 4M × 8 spare area and a (2K + 64) byte page size for the x8 configuration.
- Voltage and Power — 1.8 V nominal operation with an allowed supply range of 1.7 V to 1.95 V, suitable for low-voltage embedded systems.
- Read and Access Performance — Page-mode read cycle time of 45 ns per byte as documented for the series; the product data includes an access time specification of 30 ns.
- Program and Erase Timing — Typical page program time of 300 µs and typical block erase time of 4 ms (x8 device); write-cycle timing is listed as 350 µs in product specifications.
- Random and Serial Read — Random read latency up to 25 µs (max) and serial access characteristics documented for high-throughput streaming.
- Reliability and Endurance — Endurance rated at 60K program/erase cycles with data retention of 10 years; ECC requirement documented as 1 bit/512 bytes for x8 devices.
- Advanced NAND Features — Cache program/read, copy-back, automatic page 0 read at power-up, boot-from-NAND support, automatic memory download, bad-block protection and one-time program (OTP) operation.
- Package and Temperature — 67-ball BGA (BGA-67) surface-mount package; commercial operating temperature range 0 °C to 70 °C. RoHS compliant.
Typical Applications
- Solid-State Mass Storage — Use for embedded mass storage where SLC endurance and predictable erase/program behavior are required.
- Firmware and Boot Storage — Supports boot-from-NAND and automatic page 0 read at power-up to simplify system boot and firmware retrieval.
- Embedded Consumer and Industrial Devices — 1.8 V operation and compact BGA-67 packaging suit space-constrained embedded platforms within the commercial temperature range.
- Streaming Read/Write Systems — Cache read/program and copy-back capabilities enable efficient streaming of consecutive pages for data logging and media applications.
Unique Advantages
- Low-Voltage Operation: 1.7 V–1.95 V supply range enables integration into 1.8 V system rails.
- SLC Endurance and Retention: 60K program/erase cycles and 10-year data retention provide long-lived non-volatile storage for firmware and critical data.
- Performance Features: Cache program/read and copy-back operations reduce programming overhead and improve throughput for sequential writes and reads.
- Compact Surface-Mount Package: BGA-67 package provides a small footprint for dense board layouts while supporting the device’s parallel interface.
- Hardware Data Protection: Program/erase lockout during power transitions and bad-block protection help maintain data integrity in system power events.
- Commercial-Grade Availability: Commercial operating range (0 °C to 70 °C) and RoHS compliance for standard embedded and consumer product applications.
Why Choose F59D1G81LB-45BCG2M?
The F59D1G81LB-45BCG2M balances SLC NAND reliability and endurance with features tailored for embedded mass storage and boot applications. Its 1.8 V operation, cache and copy-back capabilities, and documented program/erase characteristics make it well suited for designs that need predictable performance and robust block management.
Backed by ESMT’s NAND feature set—including automatic page read at power-up, boot support, and OTP options—this device is appropriate for engineers and procurement teams specifying compact, reliable non-volatile storage solutions for consumer and industrial embedded systems operating within commercial temperature limits.
Request a quote or submit a procurement inquiry to receive pricing, availability, and ordering information for the F59D1G81LB-45BCG2M.
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