F59D1G161MB-45TG2M

The F59D1G161MB-45TG2M from ESMT is a 1.074 Gbit single-level cell (SLC) NAND flash device organized as 64M × 16 words. It implements a parallel x16 interface and operates from a low-voltage 1.8 V supply (1.7 V to 1.95 V), delivering non-volatile storage with SLC endurance and data retention characteristics suitable for commercial embedded and storage applications.

This device targets solid-state mass storage and embedded boot/data storage uses where fast access, block-level erase/program control and robust data management features (including ECC and bad-block handling) are required within a commercial 0 °C to 70 °C operating range.

Key Features

• Memory & Organization — 1.074 Gbit capacity organized as 64M × 16 words with SLC (1 bit per memory cell) architecture for predictable program/erase behavior.
• Performance — Specified 30 ns access time and page-mode read capability with a 45 ns cycle time per byte in page mode; fast program and erase operations support efficient data throughput.
• Program / Erase Timing — Typical program time listed as 300 µs; write cycle time (word/page) specified at 350 µs and typical block erase time of 4 ms, enabling predictable block management.
• Power — Single supply operation at 1.8 V (operating range 1.7 V to 1.95 V) for low-voltage system compatibility.
• Interface & Package — Parallel x16 I/O with multiplexed command/address/data pins; available in a 48-pin TSOPI surface-mount package (TSOPI-48).
• Data Integrity & Management — ECC requirement for x16 devices is 4 bits per 256 words; features include hardware data protection, bad-block protection, copy-back, cache program/read and One-Time Program (OTP) operation.
• Reliability — Endurance specified to 100K program/erase cycles with data retention of 10 years, and program/erase lockout during power transitions for added robustness.
• Operational Options — Boot-from-NAND support, automatic page 0 read at power-up option, automatic program and erase and automatic memory download for system integration flexibility.
• Compliance & Mounting — Commercial-grade device (0 °C to 70 °C) with surface-mount package and RoHS compliance.

Typical Applications

• Solid-State Storage — Used in mass storage implementations where SLC endurance and block-level management are required for reliable data retention.
• Embedded Boot and Firmware Storage — Boot-from-NAND support and automatic page 0 read at power-up make this device suitable for firmware and boot code storage in embedded systems.
• Consumer & Industrial Electronics — Low-voltage 1.8 V operation and a compact TSOPI-48 surface-mount package fit a range of commercial consumer and industrial devices within the 0 °C to 70 °C temperature window.
• High-Throughput Data Logging — Cache program/read and copy-back operations enable efficient streaming and block management for sequential data writes and large-file handling.

Unique Advantages

• SLC Reliability: Single-level cell architecture delivers predictable program/erase behavior and supports 100K P/E cycle endurance for longevity.
• Low-Voltage Integration: 1.8 V nominal supply (1.7 V–1.95 V) simplifies integration into low-voltage systems and power-sensitive designs.
• Robust Data Management: Built-in ECC requirements, bad-block protection, cache operations and OTP support reduce system complexity for error handling and secure storage.
• Fast Read/Write Characteristics: 30 ns access time and page-mode 45 ns cycle time per byte plus sub-millisecond program/erase characteristics support responsive system behavior.
• System-Level Features: Boot-from-NAND and automatic page 0 read at power-up simplify firmware launch and system initialization workflows.
• Surface-Mount Package: TSOPI-48 package and surface-mount mounting enable compact board-level implementations and standard assembly processes.

Why Choose F59D1G161MB-45TG2M?

The F59D1G161MB-45TG2M delivers a combination of SLC reliability, low-voltage operation and practical system-level features tailored for commercial embedded and storage applications. With explicit support for ECC, bad-block handling, cache/copy-back operations and boot-from-NAND options, it simplifies firmware storage and large-file management while offering predictable timing characteristics for system designers.

Manufactured by ESMT, this device is positioned for designers and procurement teams seeking a RoHS-compliant, surface-mount SLC NAND solution in a compact TSOPI-48 package, offering endurance (100K cycles) and 10-year data retention for longer-term deployments within its commercial temperature range.

Request a quote or submit a procurement inquiry to obtain pricing, availability and ordering information for the F59D1G161MB-45TG2M.