F59D1G161MB-45BIG2M

1Gb NAND Flash Ind.
Part Description

1Gbit SLC NAND Flash, 1.8V, x16, 45ns, Industrial BGA

Quantity 1,178 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size1 GbitAccess Time30 nsGradeIndustrial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page350 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.71

Overview of F59D1G161MB-45BIG2M – 1Gbit SLC NAND Flash, 1.8V, x16, 45ns, Industrial BGA

The F59D1G161MB-45BIG2M from ESMT is a 1.074 Gbit SLC NAND Flash memory organized as 64M × 16 with a parallel x16 interface and a 63-ball BGA package. Designed for industrial applications, it delivers non-volatile storage with JEDEC qualification and an extended operating range for robust deployment.

Key attributes include a 1.8V supply window (1.7 V to 1.95 V), a 45 ns cycle time speed grade, and industrial temperature operation from -40 °C to 85 °C, making it suitable for embedded storage and solid-state mass storage use cases.

Key Features

  • Memory Core 1.074 Gbit SLC NAND organized as 64M × 16 for reliable single-bit-per-cell storage and predictable endurance characteristics.
  • Performance 45 ns cycle time speed grade (ordering code -45) and cache read/program capabilities for pipelined data transfer and improved throughput on consecutive page operations.
  • Program & Erase Characteristics Typical program/erase behavior includes a write cycle time (word/page) of 350 µs and typical block erase timings referenced in the series datasheet; supports automatic program and erase sequences, cache program, copy-back and OTP operations.
  • Memory Organization & Page Geometry x16 page organization: page size (1K + 32) words and block erase size (64K + 2K) words as defined for the x16 device variant in the series documentation.
  • Power Low-voltage operation at 1.8V nominal with an operating range of 1.7 V to 1.95 V for energy-efficient integration into 1.8V systems.
  • Reliability & Data Integrity Endurance rated at 100K program/erase cycles and 10-year data retention (series datasheet); ECC requirement for x16 is 4-bit/256-word to support data integrity.
  • System & Boot Features Boot-from-NAND support, automatic page 0 read at power-up option, bad-block protection and program/erase lockout during power transitions.
  • Package & Temperature Surface-mount 63-ball BGA package (BGA-63) with industrial-grade operating temperature from -40 °C to 85 °C and JEDEC qualification.
  • Standards & Compliance JEDEC-qualified NAND Flash architecture with RoHS compliance.

Typical Applications

  • Industrial Embedded Storage Non-volatile program and data storage for industrial controllers, PLCs and factory automation systems operating across -40 °C to 85 °C.
  • Solid-State Mass Storage Compact NAND-based storage for devices requiring durable single-level cell memory with long data retention and high program/erase endurance.
  • Embedded Boot & Firmware Boot-from-NAND capability and automatic page 0 read at power-up simplify firmware storage and system initialization in embedded designs.
  • Communications & Networking Equipment Local storage for configuration, logs and firmware in networking gateways and industrial routers where JEDEC-qualified parts are required.

Unique Advantages

  • Industrial Temperature Rating: Supports -40 °C to 85 °C operation for reliable performance in harsh environments.
  • Low-Voltage Operation: 1.7 V–1.95 V supply window enables integration into 1.8V platforms for reduced power and simplified power-rail design.
  • SLC Endurance & Retention: 100K program/erase cycles and 10-year data retention provide longevity for long-life applications.
  • Compact BGA Package: 63-ball BGA (BGA-63) offers a space-efficient surface-mount solution for high-density PCB layouts.
  • Data Integrity Features: ECC requirement and bad-block management, plus program/erase lockout during power transitions, help protect stored data and system reliability.
  • Flexible System Integration: Parallel x16 interface, cache/read program and copy-back support help optimize throughput and simplify large-block data transfers.

Why Choose F59D1G161MB-45BIG2M?

The F59D1G161MB-45BIG2M positions itself as a practical SLC NAND Flash solution for industrial embedded storage, offering a blend of endurance, data retention and low-voltage operation. Its x16 organization, cache program/read features and boot support make it suitable for systems that require robust non-volatile memory with deterministic behavior.

With JEDEC qualification, a compact 63-ball BGA package and extended temperature range, this device is intended for designers and OEMs building long-life, reliable storage subsystems in industrial and embedded markets.

Request a quote or submit an inquiry for pricing, lead times and availability for the F59D1G161MB-45BIG2M to evaluate it for your next design.

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