F59D1G161MB-45BG2M
| Part Description |
SLC NAND Flash, 1Gbit, x16, 1.8V, 45ns, 63-ball BGA |
|---|---|
| Quantity | 869 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 1.7V ~ 1.95V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C – 70°C | Write Cycle Time Word Page | 350 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G161MB-45BG2M – SLC NAND Flash, 1Gbit, x16, 1.8V, 45ns, 63-ball BGA
The F59D1G161MB-45BG2M is a 1.074 Gbit single-level cell (SLC) NAND flash memory device in a 64M × 16 organization. Designed for 1.8 V systems (1.7 V to 1.95 V), this parallel x16 NAND targets solid-state mass storage and embedded boot/firmware storage applications where endurance, data retention and predictable program/erase behavior are required.
This device offers block-erasable NAND architecture with built-in features for program/erase control, cache and copy-back operations, and hardware data protection—providing deterministic behavior for system designers implementing non-volatile storage and boot memory.
Key Features
- Memory Core 1.074 Gbit SLC NAND organized as 64M × 16 with memory cell array specification of (64M + 2M) × 16 bits.
- Interface & Organization Parallel x16 interface with command/address/data multiplexed I/O port and page organization of (1K + 32) words per page (x16).
- Performance 45 ns speed grade (–45 suffix) with serial access/read cycle timing suitable for page-mode transfers; typical write/program cycle time (word/page) listed as 350 µs.
- Program/Erase and Reliability Automatic program and erase operations, cache program/read and copy-back support. Endurance rated at 100K program/erase cycles and data retention of 10 years (series specification).
- ECC and Data Integrity ECC requirement for x16 devices: 4 bit per 256-word, plus hardware data protection and program/erase lockout during power transitions.
- Power Low-voltage 1.8 V operation (1.7 V to 1.95 V supply range) for systems optimized for reduced VCC.
- Package & Mounting 63-ball BGA (BGA-63) surface-mount package for compact board-level integration.
- Environmental & Grade Commercial grade operation with operating temperature range 0 °C to 70 °C and RoHS compliance.
- Extended Features Supports automatic Page 0 read at power-up option, boot-from-NAND support, automatic memory download, EDO mode and One-Time-Program (OTP) operation.
Typical Applications
- Solid-State Mass Storage — Fits use cases requiring block-erasable non-volatile storage for data logging and firmware file systems.
- Boot and Firmware Storage — Boot-from-NAND support and automatic Page 0 read option simplify firmware storage and system boot sequences.
- Embedded Systems — Parallel x16 interface and compact BGA package suit embedded controllers and appliances needing onboard non-volatile memory.
- Industrial & Consumer Devices — Commercial-grade temperature range and RoHS compliance make it applicable for a wide range of non-automotive products requiring durable SLC storage.
Unique Advantages
- SLC Endurance and Retention — 100K program/erase cycles and 10-year data retention provide predictable lifetime behavior for firmware and critical data.
- Deterministic Program/Erase Timing — Typical write cycle time (word/page) of 350 µs and established block-erase behavior simplify system-level timing and flash management.
- Compact, Board-Level Integration — 63-ball BGA (BGA-63) package enables high-density PCB designs while maintaining a parallel x16 interface for efficient data transfers.
- Data Integrity Features — ECC requirement (4 bit/256-word for x16), hardware data protection and power-transition lockout help preserve data during program/erase and power events.
- System-Level Convenience — Cache program/read, copy-back, OTP and automatic Page 0 read at power-up reduce software complexity for common storage tasks.
Why Choose F59D1G161MB-45BG2M?
The F59D1G161MB-45BG2M combines SLC cell reliability with a compact 63-ball BGA package and a 1.8 V supply range to deliver durable, board-friendly NAND storage. Its SLC endurance, explicit ECC requirements and data retention characteristics make it suitable for designs that require predictable non-volatile behavior for firmware, boot code and organized file storage.
This device is aimed at engineers building embedded and storage-focused systems that need verified program/erase characteristics, integrated data protection features and a parallel x16 interface for efficient data movement. Its commercial-grade operating range and RoHS compliance further support wide deployment across consumer and industrial product lines.
Request a quote or contact sales to discuss availability, pricing and to obtain technical documentation for F59D1G161MB-45BG2M.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A