F59D1G161MB-IP(2M)
| Part Description |
SLC NAND Flash, x16, 1.8V, ECC:4bit/256Word |
|---|---|
| Quantity | 1,340 Available (as of May 4, 2026) |
Specifications & Environmental
| Device Package | 48 pin TSOPI/ 63 Ball BGA | Memory Format | NAND Flash | Technology | SLC NAND Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 1 Gbit | Access Time | 30 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 350 µs | Packaging | 48 pin TSOPI/ 63 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1G x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59D1G161MB-IP(2M) – SLC NAND Flash, x16, 1.8V, ECC:4bit/256Word
The F59D1G161MB-IP(2M) is an industrial-grade SLC NAND flash memory device in a x16 parallel organization, offering 1.074 Gbit of non‑volatile storage. Designed for solid-state mass storage and embedded system use, it provides robust data integrity with on‑die ECC support and endurance characteristics suitable for long‑life applications.
This device supports parallel command/address/data I/O and features architecture and control options focused on reliable program/erase operations, fast page access, and system boot/firmware storage scenarios within a wide operating temperature range.
Key Features
- Memory Capacity & Organization — 1.074 Gbit total capacity with x16 memory organization; page and block structures follow the x16 configuration including a page size of (1K + 32) words and block erase unit of (64K + 2K) words as specified for the series.
- Single-Level Cell (SLC) NAND Technology — SLC NAND cell architecture delivering non‑volatile storage with endurance and retention characteristics specified for the series.
- Performance — Access time specified at 30 ns and device features cache read and cache program modes to improve throughput on sequential operations.
- Program / Erase Metrics — Typical word/page program cycle time of 350 µs and series-specified program/erase behavior including automatic program and erase and copy‑back operations.
- Error Correction — ECC requirement for x16 organization is 4‑bit per 256‑word, supporting data integrity in high‑density embedded storage.
- Endurance & Retention — Endurance rated at 100K program/erase cycles and data retention specified at 10 years (series specification).
- Power Supply — Device series operates at a 1.8V supply range (1.7V to 1.95V) as specified for the family.
- Interface & I/O — Parallel interface with command/address/data multiplexed I/O port and support for boot-from-NAND and automatic memory download options.
- Package & Mounting — Available in surface‑mount packages including 48‑pin TSOPI and ball‑grid options (63‑ball BGA) as offered in the series ordering information.
- Industrial Grade Temperature — Operating temperature range from −40°C to +85°C for designs requiring extended temperature operation.
- Standards & Compliance — JEDEC qualification for the family and RoHS compliance noted in product data.
Typical Applications
- Industrial Embedded Storage — Non‑volatile SLC storage for firmware, configuration, and data logging in industrial controllers and equipment operating across −40°C to +85°C.
- Boot and Firmware Storage — Boot-from-NAND support and automatic memory download options make the device suitable for system boot and firmware image storage.
- Solid‑State Mass Storage — Architecture and features oriented for solid‑state mass storage use where endurance and long data retention are required.
- Networking & Telecom Equipment — Reliable non‑volatile storage for configuration, logging, and field upgrades in network and telecom systems.
Unique Advantages
- Designed for Long Life: 100K program/erase cycles and 10‑year data retention provide predictable life characteristics for long‑term deployments.
- Data Integrity Built‑In: ECC requirement of 4‑bit/256‑word for x16 organization helps maintain data reliability in high‑density storage applications.
- System Boot Support: Built‑in boot-from-NAND and automatic memory download options streamline firmware deployment and recovery strategies.
- Industrial Temperature Range: −40°C to +85°C operation supports demanding environmental conditions common in industrial and infrastructure applications.
- Flexible Packaging: Multiple surface‑mount package options (48‑pin TSOPI and BGA variants) enable board‑level design flexibility.
- Parallel Interface for Deterministic Access: Parallel command/address/data I/O gives predictable timing and control for embedded designs requiring direct NAND access.
Why Choose F59D1G161MB-IP(2M)?
The F59D1G161MB-IP(2M) positions itself as a reliable SLC NAND flash option for engineers needing industrial‑grade non‑volatile storage with clear endurance and retention specifications. Its x16 organization, ECC requirement, and series features such as cache operations, copy‑back, and boot support make it suitable for embedded systems, storage arrays in constrained environments, and applications requiring deterministic parallel access.
Designed with JEDEC family qualification and RoHS compliance, this device is appropriate for customers seeking a robust, long‑lived memory building block with package options to fit different board‑level integration needs.
Request a quote or submit an inquiry to obtain pricing, availability, and ordering information for F59D1G161MB-IP(2M).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A