IS42S16320F-6TL-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,485 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S16320F-6TL-TR – IC DRAM 512MBIT PAR 54TSOP II
The IS42S16320F-6TL-TR is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It provides a 167 MHz clock operation and a 5.4 ns access time, targeting systems that require moderate-density, parallel volatile memory in a compact 54‑TSOP II package.
With a supply voltage range of 3.0 V to 3.6 V and an operating temperature range of 0 °C to 70 °C (TA), the device is suitable for designs that need standard SDRAM performance and industry-standard package compatibility.
Key Features
- Memory Type Volatile SDRAM organized as 32M × 16 for a total memory capacity of 512 Mbit.
- Performance Supports a clock frequency of 167 MHz with an access time of 5.4 ns, enabling typical synchronous DRAM timing for parallel memory systems.
- Interface Parallel memory interface suitable for designs requiring a 16-bit data path.
- Power Operates from a 3.0 V to 3.6 V supply, compatible with common 3 V SDRAM power domains.
- Package Supplied in a 54‑TSOP II (0.400", 10.16 mm width) package for compact board-level integration.
- Operating Range Specified operating ambient temperature from 0 °C to 70 °C (TA).
Typical Applications
- Embedded memory expansion Use as parallel SDRAM where a 512 Mbit density and 16-bit data path are required for system memory or buffering.
- Board-level SDRAM modules Integration into small-footprint memory boards or modules that accept a 54‑TSOP II package.
- General-purpose buffering Suitable for designs needing synchronous DRAM for temporary data storage with defined timing (167 MHz clock, 5.4 ns access).
Unique Advantages
- High-density 512 Mbit capacity: Provides substantial on-board volatile storage in a single-device 32M × 16 organization.
- Synchronous performance: 167 MHz clock and 5.4 ns access time support synchronized memory operations for parallel interfaces.
- Industry-standard package: 54‑TSOP II (10.16 mm width) enables compact board layouts and compatibility with established footprint designs.
- Wide 3 V supply range: 3.0 V to 3.6 V operation aligns with common 3 V SDRAM supply domains for easy power integration.
- Predictable thermal range: Specified for 0 °C to 70 °C ambient operation for reliable use in controlled-temperature environments.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The IS42S16320F-6TL-TR combines a mid-range memory density with synchronous DRAM timing characteristics suitable for parallel memory architectures. Its 32M × 16 organization, 167 MHz clock rate, and 5.4 ns access time make it a practical choice for designs requiring defined SDRAM performance in a compact 54‑TSOP II footprint.
This device is appropriate for engineers and procurement teams specifying reliable, board-level volatile memory where standard 3.0 V power, a 16-bit data path, and a controlled operating temperature range are required.
Request a quote or submit a pricing and availability inquiry to discuss quantities, lead times, and integration details for the IS42S16320F-6TL-TR.
