IS42S16320F-6TLI

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 754 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320F-6TLI – IC DRAM 512 Mbit Parallel, 54-TSOP II

The IS42S16320F-6TLI is a 512 Mbit SDRAM organized as 32M × 16 with a parallel memory interface. It delivers synchronous DRAM performance with a specified clock frequency of 167 MHz and an access time of 5.4 ns for systems that require mid-density volatile memory.

Designed in a 54-TSOP II (0.400", 10.16 mm width) package and supporting a 3.0 V to 3.6 V supply range, this device targets designs requiring standardized parallel SDRAM integration across commercial and industrial temperature ranges.

Key Features

  • Memory Core  512 Mbit total capacity organized as 32M × 16 for parallel data paths and predictable memory mapping.
  • SDRAM Technology  Synchronous DRAM design with a clock frequency rating of 167 MHz and an access time of 5.4 ns to support time-deterministic memory operations.
  • Parallel Interface  Standard parallel memory interface suitable for systems that require direct SDRAM connectivity.
  • Voltage  Operates from 3.0 V to 3.6 V, enabling compatibility with 3 V-class memory power domains.
  • Package  Supplied in a 54-TSOP II package (0.400", 10.16 mm width) for surface-mount assembly and compact board layouts.
  • Operating Temperature  Specified for an ambient temperature range of −40°C to 85°C (TA), supporting a wide range of environmental conditions.

Typical Applications

  • Embedded memory subsystems  Acts as the primary volatile DRAM in systems that require 512 Mbit parallel SDRAM for buffers or working memory.
  • Consumer and industrial electronics  Provides mid-density SDRAM capacity in compact 54-TSOP II packaging for board-level memory requirements.
  • System prototyping and evaluation  Useful in designs and testbeds that need a 32M × 16 SDRAM device with known clock and access timing parameters.

Unique Advantages

  • Deterministic SDRAM timing  Documented 167 MHz clock rating and 5.4 ns access time enable predictable performance planning.
  • Compact board footprint  54-TSOP II package (0.400", 10.16 mm width) supports space-constrained PCB layouts.
  • Wide ambient temperature range  Rated from −40°C to 85°C (TA) for broader deployment across commercial and industrial environments.
  • Standard 3 V supply range  3.0 V to 3.6 V operation aligns with common 3 V power rails for straightforward power design.
  • Straightforward memory mapping  32M × 16 organization simplifies data bus planning and integration into parallel-memory architectures.

Why Choose IS42S16320F-6TLI?

The IS42S16320F-6TLI is positioned for designs that need a reliable 512 Mbit parallel SDRAM solution with defined timing characteristics, a compact TSOP II package, and a standard 3.0–3.6 V operating range. Its specified clock frequency and access time provide engineers with the parameters needed for predictable system timing.

This device is well suited to projects requiring mid-density volatile memory in a compact package and where operation across −40°C to 85°C is required. It offers a clear specification set for integration into embedded memory subsystems and board-level designs.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS42S16320F-6TLI.

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