IS42S16320F-6BLI-TR
| Part Description |
IC DRAM 512MBIT PAR 54TFBGA |
|---|---|
| Quantity | 194 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 20 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TW-BGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S16320F-6BLI-TR – IC DRAM 512MBIT PAR 54TFBGA
The IS42S16320F-6BLI-TR is a 512 Mbit synchronous DRAM (SDRAM) device with a 32M × 16 memory organization and a parallel memory interface. It delivers high-speed access with a 167 MHz clock frequency and a 5.4 ns access time, packaged in a 54-TFBGA (54-TW-BGA, 8×13) surface-mount package.
This device is specified for operation from -40°C to 85°C and supports a supply voltage range of 3.0 V to 3.6 V, providing a defined set of electrical and environmental characteristics for system designs that require discrete parallel SDRAM capacity.
Key Features
- Memory Type and Architecture Volatile SDRAM organized as 32M × 16 for a total memory size of 512 Mbit.
- Performance 167 MHz clock frequency with a 5.4 ns access time for fast synchronous memory cycles.
- Interface Parallel memory interface with a 16-bit data organization.
- Power Supply voltage range from 3.0 V to 3.6 V.
- Package 54-TFBGA package (listed as 54-TW-BGA, 8×13) for surface-mount integration.
- Operating Temperature Rated for ambient operation from -40°C to 85°C (TA).
Unique Advantages
- 512 Mbit density: Provides substantial DRAM capacity in a single device through its 32M × 16 organization.
- High-speed operation: 167 MHz clocking and 5.4 ns access time enable faster memory access cycles.
- Parallel 16-bit data path: Native 16-bit organization supports wide data transfers using a parallel interface.
- Defined supply range: 3.0 V to 3.6 V supply rating aligns with 3.3 V system rails.
- Compact BGA package: 54-TFBGA (8×13) package supports surface-mount PCB layouts with a small footprint.
- Extended ambient rating: Specified for -40°C to 85°C operation for broader environmental use.
Why Choose IC DRAM 512MBIT PAR 54TFBGA?
The IS42S16320F-6BLI-TR from Integrated Silicon Solution Inc. is targeted at designs that require a discrete 512 Mbit SDRAM device with a parallel 16-bit interface and clearly specified electrical and thermal operating limits. Its combination of 32M × 16 organization, 167 MHz clock frequency, and 5.4 ns access time offers a defined performance profile for systems needing synchronous DRAM capacity.
Choose this device when your design requires the listed density, speed, supply voltage range, package style, and ambient temperature rating from a known memory supplier. The product specification provides concrete parameters to evaluate integration into existing memory subsystems and system designs.
Request a quote or submit an inquiry for IS42S16320F-6BLI-TR to obtain current availability and pricing information.
