IS42S16320F-6TL
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 707 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S16320F-6TL – 512 Mbit SDRAM, 54‑TSOP II
The IS42S16320F-6TL is a 512 Mbit volatile SDRAM device from Integrated Silicon Solution Inc (ISSI) configured as 32M × 16. It implements a parallel DRAM interface and is specified with a 167 MHz clock frequency and a 5.4 ns access time.
Designed for systems that require on‑board parallel SDRAM, this device offers mid‑density memory in a compact 54‑TSOP II package with a 3.0–3.6 V supply and an operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 512 Mbit DRAM organized as 32M × 16, providing wide data paths for parallel memory architectures.
- SDRAM Performance Synchronous DRAM operation with a clock frequency of 167 MHz and a listed access time of 5.4 ns for high‑speed parallel transfers.
- Interface & Organization Parallel memory interface suitable for designs requiring conventional DRAM control and data timing.
- Power Specified supply voltage range of 3.0 V to 3.6 V for standard 3 V SDRAM systems.
- Package 54‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board mounting.
- Operating Conditions Commercial temperature range: 0 °C to 70 °C (TA).
Typical Applications
- Parallel DRAM systems — Provides 512 Mbit of parallel SDRAM (32M × 16) for designs that use conventional DRAM control and data buses.
- High‑speed buffering — 167 MHz clocking and 5.4 ns access time support applications that require fast data read/write cycles.
- Compact board designs — 54‑TSOP II package is suited to assemblies where board area and standard TSOP footprints are required.
Unique Advantages
- Balanced density and bus width: 32M × 16 organization delivers a 512 Mbit capacity with a 16‑bit data path for straightforward integration into parallel memory buses.
- Defined timing performance: 167 MHz clock with 5.4 ns access time provides predictable timing characteristics for system memory design and validation.
- Standard 3 V supply range: 3.0–3.6 V operation aligns with common SDRAM power rails, simplifying power supply design.
- Compact TSOP II packaging: 54‑pin TSOP (0.400", 10.16 mm) minimizes PCB footprint while maintaining accessible pinout for parallel interfaces.
- Commercial temperature rating: 0 °C to 70 °C specification supports typical consumer and industrial indoor operating environments.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The IS42S16320F-6TL delivers a clear, specification‑driven memory option for designs requiring 512 Mbit of parallel SDRAM in a 16‑bit configuration. Its defined clocking and access time, combined with a standard 3.0–3.6 V supply and compact 54‑TSOP II package, make it suitable for systems where predictable timing and board space efficiency are important.
Manufactured by Integrated Silicon Solution Inc, this device is well suited to engineering teams and procurement groups building systems that rely on parallel DRAM memory modules and require concise specification match to system requirements.
Request a quote or submit a sourcing inquiry to check availability, pricing, and lead times for the IS42S16320F-6TL.