IS42S32400B-6BL

The IS42S32400B-6BL is a 128‑Mbit synchronous DRAM organized as 4M × 32 and implemented as a quad‑bank SDRAM. It uses a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the clock, enabling high‑speed, burst‑oriented data transfers.

Designed to operate from 3.0 V to 3.6 V (VDD/VDDQ nominal 3.3 V) and offered in a 90‑TFBGA (8×13) package, the device provides programmable latency and burst controls along with refresh and power‑saving modes for system memory designs requiring predictable, parallel SDRAM behavior.

Key Features

• Core / Memory Organization  128 Mbit capacity organized as 4M × 32 with quad internal banks (each 33,554,432 bits, 4,096 rows × 256 columns × 32 bits).
• Performance  Clock frequency options up to 166 MHz (other supported rates include 143, 125, 100 MHz); access time from clock as low as 5.4 ns for CAS‑latency = 3.
• Programmable Burst and Latency  Programmable burst length (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh and Power Management  Auto Refresh (CBR), Self Refresh with programmable refresh periods, and 4096 refresh cycles every 64 ms to meet DRAM refresh requirements.
• Interface  Fully synchronous operation with LVTTL‑compatible inputs and a parallel memory interface supporting random column address changes every clock cycle.
• Bank Management  Internal bank architecture supports bank interleaving and hides row access/precharge to improve sustained throughput.
• Voltage and Package  VDD/VDDQ = 3.3 V nominal (operating range 3.0 V–3.6 V); available in 90‑ball TFBGA (8×13) packaging.
• Temperature Range  Commercial operating temperature range: 0°C to 70°C (TA).

Typical Applications

• Parallel memory subsystems  Implement parallel SDRAM memory on boards where a 128‑Mbit, quad‑bank synchronous device is required.
• High‑speed burst buffering  Use programmable burst lengths and CAS latency to match burst read/write patterns for throughput‑oriented designs.
• Power‑sensitive designs  Leverage Auto Refresh and Self Refresh modes to manage refresh cycles and reduce standby power in systems operating at 3.3 V.

Unique Advantages

• Flexible performance tuning: Programmable CAS latency (2 or 3) and selectable burst lengths enable tuning for different access patterns and clock rates.
• High‑rate synchronous operation: Support for up to 166 MHz clocking and 5.4 ns access time (CLK‑referenced) for low‑latency read access.
• Bank interleaving to hide latency: Four internal banks allow overlapping of row access and precharge operations to improve effective throughput.
• Comprehensive refresh control: Auto Refresh and Self Refresh with programmable periods and 4096 cycles per 64 ms help meet system retention requirements.
• Board‑level packaging and voltage compatibility: 128 Mbit density in a 90‑TFBGA (8×13) package with 3.0–3.6 V supply support simplifies integration into 3.3 V memory subsystems.
• LVTTL compatible interface: Standard LVTTL signaling eases integration with parallel memory controllers using synchronous clocked control.

Why Choose IS42S32400B-6BL?

The IS42S32400B-6BL delivers a compact, 128‑Mbit synchronous DRAM solution with programmable latency, burst control, and internal bank architecture to support sustained, burst‑oriented memory access. Its 3.3 V supply operation, LVTTL interface, and 90‑TFBGA packaging make it suitable for designs that require a predictable parallel SDRAM building block with flexible timing and refresh options.

This device is appropriate for engineers specifying board‑level SDRAM where tunable performance (up to 166 MHz), refresh management, and bank interleaving are required to meet application‑level throughput and power objectives.

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