IS45S16160J-7TLA1-TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 179 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS45S16160J-7TLA1-TR – IC DRAM 256 Mbit Parallel SDRAM, 54‑TSOP II

The IS45S16160J-7TLA1-TR is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It provides operation at a 143 MHz clock frequency with an access time of 5.4 ns, making it suitable for designs that require deterministic parallel DRAM performance.

Packaged in a 54‑TSOP II (0.400", 10.16 mm width) and specified for an ambient operating range of −40 °C to 85 °C, this device targets applications that need a mid-density DRAM solution with standard voltage supply and robust thermal range.

Key Features

  • Memory Architecture 256 Mbit capacity organized as 16M × 16 for parallel data paths and predictable memory mapping.
  • Technology SDRAM volatile memory type providing synchronous operation with an external clock.
  • Interface Parallel memory interface compatible with systems designed for parallel DRAM integration.
  • Performance 143 MHz clock frequency and 5.4 ns access time support time-sensitive read/write operations.
  • Power Single supply operation from 3.0 V to 3.6 V for standard 3 V memory systems.
  • Package 54‑TSOP II (0.400", 10.16 mm width) supplier device package for surface-mount board designs.
  • Operating Temperature Specified ambient range −40 °C to 85 °C to cover a broad set of environmental conditions.

Unique Advantages

  • Mid-density capacity: 256 Mbit storage density provides a balance between memory size and board footprint for moderate data buffers and frame stores.
  • Synchronous SDRAM performance: Synchronous operation at 143 MHz with a 5.4 ns access time delivers predictable timing for parallel memory systems.
  • Standard 3 V supply: 3.0–3.6 V voltage range aligns with common 3 V memory power domains.
  • Industry-standard package: 54‑TSOP II package supports common surface-mount assembly processes and board layouts.
  • Wide ambient range: −40 °C to 85 °C operating range supports a variety of environmental deployment scenarios.
  • Parallel interface compatibility: Direct parallel interface integration simplifies replacement or upgrade in designs using parallel DRAM memory.

Why Choose IS45S16160J-7TLA1-TR?

The IS45S16160J-7TLA1-TR positions itself as a practical SDRAM option for designs that require a 256 Mbit parallel DRAM with synchronous operation, deterministic access timing, and a standard 54‑TSOP II surface-mount package. Its 143 MHz clock capability and 5.4 ns access time provide measurable performance characteristics for systems that rely on parallel memory transfers.

This device is well suited to engineers and procurement teams seeking a mid-density SDRAM with a standard voltage range (3.0–3.6 V) and a broad ambient temperature specification (−40 °C to 85 °C), supporting stable integration into a variety of electronic systems.

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