IS45S16160J-7TLA1
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 160 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS45S16160J-7TLA1 – IC DRAM 256Mbit PAR 54TSOP II
The IS45S16160J-7TLA1 is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It supports operation at a clock frequency up to 143 MHz with an access time of 5.4 ns, and is supplied for 3.0 V to 3.6 V systems.
This device is provided in a 54‑pin TSOP II (0.400", 10.16 mm width) package and is specified for an ambient operating temperature range of −40 °C to 85 °C, making it suitable for designs that require compact, parallel SDRAM memory at these electrical and environmental conditions.
Key Features
- Memory Architecture 256 Mbit SDRAM organized as 16M × 16 providing parallel DRAM storage.
- Performance Supports a clock frequency of 143 MHz and an access time of 5.4 ns for fast parallel memory access.
- Voltage Supply Operates from 3.0 V to 3.6 V, compatible with standard 3.3 V system supplies.
- Package and Mounting 54‑pin TSOP II package (0.400", 10.16 mm width) for board-level mounting and compact footprint.
- Temperature Range Rated for operation from −40 °C to 85 °C (TA), supporting a wide ambient range.
- Memory Interface & Format Parallel memory interface in DRAM format suited to systems requiring conventional SDRAM signaling.
- Volatile Memory Type SDRAM volatile memory intended for temporary data storage and buffering in active systems.
Typical Applications
- Parallel SDRAM Memory Provides 256 Mbit of volatile SDRAM memory in systems that require a 16M × 16 parallel memory organization.
- Board-Level Memory Expansion Compact 54‑TSOP II package enables board-level integration for designs needing additional parallel DRAM capacity.
- Thermally Demanding Environments Operation from −40 °C to 85 °C supports use where a wide ambient temperature range is required.
Unique Advantages
- High‑density 256 Mbit capacity: 16M × 16 organization provides substantial parallel DRAM capacity in a single device.
- Measured performance: 143 MHz clock frequency and 5.4 ns access time deliver predictable timing for parallel memory designs.
- Standard 3.3 V compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system power rails.
- Compact TSOP II package: 54‑pin, 10.16 mm width TSOP II offers a space-efficient footprint for board-mounted memory.
- Wide operating temperature: −40 °C to 85 °C rating supports deployment in varied ambient conditions.
Why Choose IS45S16160J-7TLA1?
The IS45S16160J-7TLA1 positions itself as a straightforward, specification-driven solution for designs requiring 256 Mbit of parallel SDRAM in a compact TSOP II package. Its defined clock frequency, access time, supply range, and temperature rating provide clear parameters for system designers and procurement.
This device is well suited to projects that need a reliable, board-mounted parallel DRAM component with known electrical and environmental characteristics, simplifying BOM selection and integration for engineers focused on predictable memory behavior.
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