IS45S16160J-7TLA2-TR

The IS45S16160J-7TLA2-TR is a 256 Mbit volatile SDRAM organized as 16M × 16 with a parallel memory interface. It delivers a 143 MHz clock frequency and a 5.4 ns access time in a compact 54‑TSOP II (0.400", 10.16 mm width) package.

Manufactured by Integrated Silicon Solution Inc., this device is suited for systems that require mid-density parallel DRAM operating from 3.0 V to 3.6 V and across an extended temperature range of −40 °C to 105 °C.

Key Features

• Memory Type and Capacity  256 Mbit DRAM, volatile memory organized as 16M × 16 for straightforward parallel memory mapping.
• SDRAM Architecture  Synchronous DRAM technology supporting clocked operation at up to 143 MHz for synchronous data transfers.
• Performance  Rated access time of 5.4 ns to support time-sensitive memory operations.
• Interface  Parallel memory interface for integration with systems designed for parallel DRAM modules.
• Power  Operates from a 3.0 V to 3.6 V supply range, compatible with standard 3.3 V system rails.
• Package  54‑TSOP II (0.400", 10.16 mm width) surface-mount package (Supplier device package: 54-TSOP II) for compact board-level integration.
• Operating Temperature  Specified ambient temperature range of −40 °C to 105 °C (TA) for extended-environment operation.

Typical Applications

• Embedded Systems  Serves as system memory in embedded designs that require a 256 Mbit parallel SDRAM with synchronous operation.
• Industrial Control  Supports industrial equipment where the −40 °C to 105 °C temperature range and 3.0–3.6 V supply are required.
• Consumer and Communications Devices  Provides mid-density volatile memory in consumer electronics and communications equipment that use parallel SDRAM interfaces and compact TSOP footprints.

Unique Advantages

• Mid-density capacity:  256 Mbit organized as 16M × 16 offers a balance between density and addressability for many system designs.
• Synchronous operation at 143 MHz:  Clocked SDRAM operation enables predictable timing for synchronous data transfer requirements.
• Fast access time:  5.4 ns access time supports responsive memory access for latency-sensitive tasks.
• Wide operating voltage:  3.0 V to 3.6 V supply compatibility aligns with common 3.3 V systems.
• Compact TSOP II package:  54‑lead TSOP II package (0.400", 10.16 mm width) minimizes board area while providing familiar surface-mount integration.
• Extended temperature range:  −40 °C to 105 °C rating supports deployment in environments with broad ambient conditions.

Why Choose IS45S16160J-7TLA2-TR?

The IS45S16160J-7TLA2-TR combines a 256 Mbit SDRAM architecture with synchronous operation and a compact 54‑TSOP II package to meet mid-density parallel memory requirements. Its 143 MHz clock rating, 5.4 ns access time, and 3.0–3.6 V supply range make it suitable for designs that need predictable timing and standard 3.3 V compatibility.

With an ambient operating range of −40 °C to 105 °C and manufacturing by Integrated Silicon Solution Inc., this device is positioned for engineers and procurement teams focused on durable, board-level parallel DRAM solutions for embedded, industrial, and communications applications.

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