IS45S16160L-6TLA1

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 782 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS45S16160L-6TLA1 – 256Mbit SDRAM, 54-TSOP II

The IS45S16160L-6TLA1 is a 256 Mbit synchronous DRAM (SDRAM) device organized as 16M × 16. It provides a LVTTL memory interface and is specified for operation from a 3.0 V to 3.6 V supply.

Designed for compact system integration, the device supports a 166 MHz clock frequency with a 5.4 ns access time and is offered in a 54-TSOP II package with an operating temperature range of -40°C to 85°C.

Key Features

  • Memory Type  Volatile SDRAM organized as 16M × 16 for a total capacity of 256 Mbit.
  • Performance  Synchronous operation with a 166 MHz clock frequency and an access time of 5.4 ns.
  • Interface  LVTTL memory interface for TTL-compatible signaling.
  • Voltage Supply  Operates from 3.0 V to 3.6 V.
  • Package  54-TSOP II (0.400", 10.16 mm width) surface-mount package for compact board layouts.
  • Operating Temperature  Rated for ambient temperatures from -40°C to 85°C (TA).
  • Memory Format  Standard DRAM format, intended as volatile system memory.

Unique Advantages

  • High-speed synchronous operation: 166 MHz clock and 5.4 ns access time provide predictable, low-latency SDRAM performance.
  • Compact surface-mount package: 54-TSOP II with 10.16 mm width supports space-efficient PCB designs.
  • TTL-compatible interface: LVTTL signaling simplifies integration with TTL-level logic domains.
  • Standard 3 V supply: 3.0–3.6 V range aligns with common 3 V memory rails in embedded systems.
  • Extended temperature range: -40°C to 85°C rating supports deployment across a wide range of ambient conditions.

Why Choose IS45S16160L-6TLA1?

The IS45S16160L-6TLA1 delivers a straightforward, specification-driven SDRAM option when a 256 Mbit, 16M × 16 memory solution is required. Its combination of 166 MHz synchronous operation, LVTTL interface, and a compact 54-TSOP II package makes it suitable for designs that need predictable DRAM behavior within a standard 3.0–3.6 V power domain.

This device is appropriate for engineers and procurement teams seeking a clear, verifiable memory component with defined electrical, timing, and environmental parameters, supporting design decisions that prioritize compatibility with TTL signaling and compact board-space constraints.

Request a quote or submit an inquiry to check availability, pricing, and lead time for the IS45S16160L-6TLA1.

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