IS45S16160L-7BLA2-TR
| Part Description |
IC DRAM 256MBIT PAR 54TFBGA |
|---|---|
| Quantity | 308 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS45S16160L-7BLA2-TR – IC DRAM 256 Mbit PAR 54-TFBGA
The IS45S16160L-7BLA2-TR is a 256 Mbit volatile SDRAM organized as 16M × 16. It implements standard SDRAM architecture with an LVTTL memory interface and is specified for operation from 3.0 V to 3.6 V.
This device is provided in a 54-TFBGA (8×8) package and is characterized with a clock frequency of 143 MHz and an access time of 5.4 ns, supporting designs that require mid-density synchronous DRAM in a compact ball-grid array footprint and extended ambient temperature capability.
Key Features
- Memory Core 256 Mbit SDRAM organized as 16M × 16 bits, delivering a straightforward parallel DRAM configuration.
- Performance Rated clock frequency of 143 MHz with an access time of 5.4 ns for synchronous DRAM operation.
- Interface LVTTL memory interface for standard parallel SDRAM signaling.
- Power Operates from a 3.0 V to 3.6 V supply range.
- Package 54-TFBGA (8×8) supplier device package, optimized for compact board-level integration.
- Operating Temperature Specified ambient temperature range from -40 °C to 105 °C (TA).
- Memory Format Volatile DRAM suitable where temporary storage and fast refreshable memory are required.
Unique Advantages
- Mid-density memory capacity: 256 Mbit (16M × 16) provides a balance of storage and board area for systems needing moderate DRAM capacity.
- Synchronous performance: 143 MHz clock rating and 5.4 ns access time give predictable timing for SDRAM-based designs.
- Compact BGA footprint: 54-TFBGA (8×8) package minimizes PCB area while providing a ball-grid array mounting for higher pin density.
- Extended temperature range: -40 °C to 105 °C ambient rating supports deployments across a wide range of operating environments.
- <strong-Wide supply tolerance: Supports standard 3.0 V to 3.6 V supplies for compatibility with common 3V SDRAM power rails.
Why Choose IS45S16160L-7BLA2-TR?
The IS45S16160L-7BLA2-TR positions as a practical mid-density SDRAM option for designs that require 256 Mbit of volatile storage in a compact 54-TFBGA package. Its defined clock and access-time specifications provide clear timing targets for system memory planning, while the -40 °C to 105 °C ambient range and 3.0 V–3.6 V supply make it suitable for applications with broader environmental and power tolerances.
This device is well suited to engineers and procurement teams seeking a straightforward SDRAM component with documented electrical and packaging parameters for integration into systems that need synchronous DRAM with LVTTL signaling and a compact BGA footprint.
Request a quote or contact sales to obtain pricing and availability for the IS45S16160L-7BLA2-TR.