IS45S16160L-7BLA2-TR

IC DRAM 256MBIT PAR 54TFBGA
Part Description

IC DRAM 256MBIT PAR 54TFBGA

Quantity 308 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS45S16160L-7BLA2-TR – IC DRAM 256 Mbit PAR 54-TFBGA

The IS45S16160L-7BLA2-TR is a 256 Mbit volatile SDRAM organized as 16M × 16. It implements standard SDRAM architecture with an LVTTL memory interface and is specified for operation from 3.0 V to 3.6 V.

This device is provided in a 54-TFBGA (8×8) package and is characterized with a clock frequency of 143 MHz and an access time of 5.4 ns, supporting designs that require mid-density synchronous DRAM in a compact ball-grid array footprint and extended ambient temperature capability.

Key Features

  • Memory Core  256 Mbit SDRAM organized as 16M × 16 bits, delivering a straightforward parallel DRAM configuration.
  • Performance  Rated clock frequency of 143 MHz with an access time of 5.4 ns for synchronous DRAM operation.
  • Interface  LVTTL memory interface for standard parallel SDRAM signaling.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  54-TFBGA (8×8) supplier device package, optimized for compact board-level integration.
  • Operating Temperature  Specified ambient temperature range from -40 °C to 105 °C (TA).
  • Memory Format  Volatile DRAM suitable where temporary storage and fast refreshable memory are required.

Unique Advantages

  • Mid-density memory capacity: 256 Mbit (16M × 16) provides a balance of storage and board area for systems needing moderate DRAM capacity.
  • Synchronous performance: 143 MHz clock rating and 5.4 ns access time give predictable timing for SDRAM-based designs.
  • Compact BGA footprint: 54-TFBGA (8×8) package minimizes PCB area while providing a ball-grid array mounting for higher pin density.
  • Extended temperature range: -40 °C to 105 °C ambient rating supports deployments across a wide range of operating environments.
  • <strong-Wide supply tolerance: Supports standard 3.0 V to 3.6 V supplies for compatibility with common 3V SDRAM power rails.

Why Choose IS45S16160L-7BLA2-TR?

The IS45S16160L-7BLA2-TR positions as a practical mid-density SDRAM option for designs that require 256 Mbit of volatile storage in a compact 54-TFBGA package. Its defined clock and access-time specifications provide clear timing targets for system memory planning, while the -40 °C to 105 °C ambient range and 3.0 V–3.6 V supply make it suitable for applications with broader environmental and power tolerances.

This device is well suited to engineers and procurement teams seeking a straightforward SDRAM component with documented electrical and packaging parameters for integration into systems that need synchronous DRAM with LVTTL signaling and a compact BGA footprint.

Request a quote or contact sales to obtain pricing and availability for the IS45S16160L-7BLA2-TR.

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