IS45S16160L-7TLA1
| Part Description |
IC DRAM 256MBIT PAR 54TSOP II |
|---|---|
| Quantity | 407 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS45S16160L-7TLA1 – IC DRAM 256MBIT PAR 54TSOP II
The IS45S16160L-7TLA1 is a 256 Mbit volatile DRAM implemented as SDRAM with a 16M × 16 memory organization. Manufactured by ISSI (Integrated Silicon Solution Inc), it provides an LVTTL memory interface and is optimized for systems requiring external SDRAM at a 3.0 V–3.6 V supply.
This device targets applications that need a mid-density SDRAM solution with defined clock and access performance, compact 54‑TSOP II packaging, and an extended operating temperature range of −40°C to 85°C.
Key Features
- Memory Type & Architecture 256 Mbit SDRAM (DRAM) implemented as 16M × 16 organization for byte-parallel data access.
- Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, enabling rapid read/write cycles consistent with the specified timing.
- Interface LVTTL memory interface for standard logic-level signaling and external memory integration.
- Power Operates from a 3.0 V–3.6 V supply range, accommodating common 3.3 V system rails.
- Package & Mounting Supplied in a 54‑TSOP II surface-mount package (0.400" / 10.16 mm width) for compact PCB layouts.
- Operating Temperature Rated for −40°C to 85°C (TA), suitable for designs requiring extended temperature range operation.
Typical Applications
- Embedded memory for system designs Provides 256 Mbit SDRAM capacity with LVTTL signaling and 3.0 V–3.6 V operation for external memory expansion in embedded systems.
- Temporary data buffering 143 MHz clocking and 5.4 ns access time support use as a buffer or working memory for data-intensive tasks.
- Space-constrained PCBs The 54‑TSOP II package (10.16 mm width) enables integration where board area and profile are limited.
Unique Advantages
- High-density 256 Mbit capacity: Delivers substantial memory capacity in a single 54‑TSOP II device to minimize component count.
- Defined timing performance: 143 MHz clock and 5.4 ns access time give clear performance parameters for system timing and memory scheduling.
- Standard LVTTL interface: Simplifies integration with common digital logic levels and external memory controllers.
- 3.0 V–3.6 V supply compatibility: Matches typical 3.3 V system rails for straightforward power design.
- Extended operating temperature: −40°C to 85°C rating supports deployments across a wide ambient range.
- Compact TSOP packaging: 54‑TSOP II reduces board footprint while maintaining accessible pinout for SMT assembly.
Why Choose IC DRAM 256MBIT PAR 54TSOP II?
The IS45S16160L-7TLA1 positions itself as a practical SDRAM option where a 256 Mbit density, predictable timing (143 MHz clock, 5.4 ns access), and a compact 54‑TSOP II package are required. Its LVTTL interface and 3.0 V–3.6 V supply range make it straightforward to integrate into standard digital systems.
This device is well-suited to designers seeking a mid-density external SDRAM solution that balances capacity, measured performance, and a small-package form factor within an extended operating temperature window.
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