IS45S16160L-7TLA1

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 407 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time12 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization16M x 16
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS45S16160L-7TLA1 – IC DRAM 256MBIT PAR 54TSOP II

The IS45S16160L-7TLA1 is a 256 Mbit volatile DRAM implemented as SDRAM with a 16M × 16 memory organization. Manufactured by ISSI (Integrated Silicon Solution Inc), it provides an LVTTL memory interface and is optimized for systems requiring external SDRAM at a 3.0 V–3.6 V supply.

This device targets applications that need a mid-density SDRAM solution with defined clock and access performance, compact 54‑TSOP II packaging, and an extended operating temperature range of −40°C to 85°C.

Key Features

  • Memory Type & Architecture 256 Mbit SDRAM (DRAM) implemented as 16M × 16 organization for byte-parallel data access.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, enabling rapid read/write cycles consistent with the specified timing.
  • Interface LVTTL memory interface for standard logic-level signaling and external memory integration.
  • Power Operates from a 3.0 V–3.6 V supply range, accommodating common 3.3 V system rails.
  • Package & Mounting Supplied in a 54‑TSOP II surface-mount package (0.400" / 10.16 mm width) for compact PCB layouts.
  • Operating Temperature Rated for −40°C to 85°C (TA), suitable for designs requiring extended temperature range operation.

Typical Applications

  • Embedded memory for system designs Provides 256 Mbit SDRAM capacity with LVTTL signaling and 3.0 V–3.6 V operation for external memory expansion in embedded systems.
  • Temporary data buffering 143 MHz clocking and 5.4 ns access time support use as a buffer or working memory for data-intensive tasks.
  • Space-constrained PCBs The 54‑TSOP II package (10.16 mm width) enables integration where board area and profile are limited.

Unique Advantages

  • High-density 256 Mbit capacity: Delivers substantial memory capacity in a single 54‑TSOP II device to minimize component count.
  • Defined timing performance: 143 MHz clock and 5.4 ns access time give clear performance parameters for system timing and memory scheduling.
  • Standard LVTTL interface: Simplifies integration with common digital logic levels and external memory controllers.
  • 3.0 V–3.6 V supply compatibility: Matches typical 3.3 V system rails for straightforward power design.
  • Extended operating temperature: −40°C to 85°C rating supports deployments across a wide ambient range.
  • Compact TSOP packaging: 54‑TSOP II reduces board footprint while maintaining accessible pinout for SMT assembly.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The IS45S16160L-7TLA1 positions itself as a practical SDRAM option where a 256 Mbit density, predictable timing (143 MHz clock, 5.4 ns access), and a compact 54‑TSOP II package are required. Its LVTTL interface and 3.0 V–3.6 V supply range make it straightforward to integrate into standard digital systems.

This device is well-suited to designers seeking a mid-density external SDRAM solution that balances capacity, measured performance, and a small-package form factor within an extended operating temperature window.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the IS45S16160L-7TLA1.

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