IS45S16320D-6CTLA1

The IS45S16320D-6CTLA1 is a 512 Mbit synchronous DRAM (SDRAM) organized as 32M × 16 with a parallel memory interface. It uses a pipeline architecture and fully synchronous timing referenced to the rising edge of the clock to enable high-speed data transfer.

Designed for applications requiring a 512 Mbit SDRAM with programmable burst control and internal bank management, this device delivers deterministic access characteristics and supports operation across an extended temperature range.

Key Features

• Memory Organization and Capacity — 512 Mbit total capacity arranged as 32M × 16, providing a wide parallel data path for high-throughput systems.
• Synchronous Pipeline Architecture — Fully synchronous operation with all signals referenced to the positive clock edge; internal bank structure hides row access/precharge to improve effective throughput.
• Performance — Rated clock frequency for this device is 166 MHz with an access time from clock of 5.4 ns (CAS latency = 3 at -6 speed grade).
• Programmable Burst and CAS — Supports programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency of 2 or 3 clocks.
• Refresh and Power Management — Auto-Refresh and Self-Refresh supported with 8K refresh cycles per 64 ms for standard operation.
• Interface and Signaling — Parallel memory interface with LVTTL-compatible signaling.
• Voltage Range — Operational supply range of 3.0 V to 3.6 V.
• Package — Supplied in a 54-pin TSOP-II package (0.400", 10.16 mm width) suitable for compact board-level designs.
• Operating Temperature — Rated for operation from −40°C to +85°C (TA).

Typical Applications

• System Memory Expansion — Use as a 512 Mbit SDRAM in systems requiring parallel DRAM memory for high-throughput data buffering and storage.
• High-Speed Data Buffers — Suitable for applications that benefit from synchronous pipeline operation and internal bank management to improve sustained data transfer.
• Industrial-Temperature Designs — Applicable in designs that require memory operation across −40°C to +85°C ambient temperatures.

Unique Advantages

• Deterministic Synchronous Timing: Fully synchronous clock-referenced operation simplifies timing analysis and system integration.
• Flexible Burst Control: Programmable burst lengths and sequence options allow tuning for sequential or random access patterns.
• Internal Bank Architecture: Banked memory hides row access/precharge cycles to improve effective throughput for burst operations.
• Compact TSOP-II Package: 54-pin TSOP-II footprint provides a space-efficient solution for board-level memory implementations.
• Extended Temperature Range: Rated for −40°C to +85°C to support applications operating across a wide ambient temperature window.
• Wide Supply Tolerance: Operates from 3.0 V to 3.6 V to accommodate common 3.3 V system power rails.

Why Choose IS45S16320D-6CTLA1?

The IS45S16320D-6CTLA1 combines 512 Mbit capacity with a 32M × 16 organization and a synchronous pipeline architecture to provide predictable, high-speed parallel DRAM performance. Its programmable burst modes, CAS options, and internal bank management make it suitable for designs that require configurable throughput and efficient burst handling.

With a 54-pin TSOP-II package, support for standard LVTTL signaling, a 3.0–3.6 V supply window, and operation from −40°C to +85°C, this device is aimed at engineers implementing compact, robust memory subsystems backed by Integrated Silicon Solution, Inc.'s product specification and documentation.

If you need pricing, availability or to request a quote for the IS45S16320D-6CTLA1, please contact sales to discuss lead times and ordering details.