IS45S16320D-7BLA1

The IS45S16320D-7BLA1 is a 512 Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock to support high-speed burst operations.

Designed for applications that require a compact x16 SDRAM solution, the device delivers a -7 speed grade with a 143 MHz clock frequency and a 5.4 ns access time, while supporting industrial temperature ranges and standard 54‑ball TF‑BGA packaging for space-constrained boards.

Key Features

• Memory Core  512 Mbit SDRAM organized as 32M × 16 with internal bank architecture (4 banks) to hide row access/precharge and support pipelined operation.
• Performance  -7 speed grade: 143 MHz maximum clock frequency and 5.4 ns access time (CAS latency options 2 or 3) for fast burst transfers.
• Burst and Latency Control  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); burst termination via burst stop and precharge commands.
• Refresh and Self-Management  Supports Auto Refresh (CBR), Self Refresh, and 8K refresh cycles every 64 ms to maintain data integrity.
• Interface and Signaling  Parallel SDRAM interface with LVTTL signaling and random column addressing every clock cycle.
• Power  Supply range 3.0 V – 3.6 V; S-series devices use VDD/VDDQ = 3.3 V.
• Package and Mounting  54‑ball TF‑BGA (8 × 13) package optimized for compact board layouts; surface-mount TF‑BGA assembly.
• Temperature Range  Industrial-grade operation: −40 °C to +85 °C (TA).

Typical Applications

• High-speed buffering and frame storage  Used where synchronous, burstable parallel memory is required for temporary data storage and transfer at up to 143 MHz.
• 16-bit data‑path memory expansion  32M × 16 organization provides a native x16 data width for systems with 16-bit memory buses.
• Industrial systems  Operation from −40 °C to +85 °C suits embedded and industrial designs that need reliable DRAM in extended temperature environments.

Unique Advantages

• Deterministic synchronous operation  Fully synchronous, clock-referenced signaling simplifies timing analysis and system integration with other clocked logic.
• Flexible burst control  Programmable burst length and sequence plus CAS latency options enable tuning for throughput or latency depending on system needs.
• Compact TF‑BGA footprint  54‑ball TF‑BGA (8×13) minimizes PCB area for high-density designs while maintaining robust solderable connections.
• Industrial temperature support  Rated for −40 °C to +85 °C to meet environmental requirements commonly found in embedded and industrial applications.
• Standard voltage operation  S‑series VDD/VDDQ = 3.3 V compatibility with common 3.3 V system rails simplifies power supply design.

Why Choose IS45S16320D-7BLA1?

The IS45S16320D-7BLA1 provides a compact, synchronous 512 Mbit memory solution balanced for performance and board-area efficiency. With a -7 timing grade (143 MHz) and 5.4 ns access time, programmable burst options, and robust refresh/self‑refresh features, it is well suited for designs that require predictable, high-speed parallel DRAM behavior within industrial temperature ranges.

This device is appropriate for engineers building systems that need native x16 memory organization, reliable refresh management, and a small TF‑BGA package. Its combination of timing flexibility, standard 3.3 V supply (S‑series), and industrial temperature rating offers long-term design stability for embedded and industrial memory subsystems.

Request a quote or submit a quotation request for IS45S16320D-7BLA1 to evaluate suitability for your design and obtain pricing and availability information.