IS45S16320D-6CTLA1-TR

The IS45S16320D-6CTLA1-TR is a 512 Mbit synchronous DRAM device organized as 32M × 16 with a parallel memory interface. It uses a pipelined, fully synchronous architecture with internal bank management and all signals referenced to the rising edge of the clock.

Designed for systems that require parallel SDRAM memory at up to 166 MHz, the device provides programmable burst operation, auto/self-refresh capability and a compact 54-pin TSOP-II package with an industrial operating temperature range.

Key Features

• Core / Architecture  Fully synchronous pipeline architecture with internal bank structure that hides row access/precharge and references all I/O to the rising clock edge.
• Memory Organization  512 Mbit capacity arranged as 32M × 16 with four internal banks for interleaved access.
• Performance  Supports a 166 MHz clock frequency (device -6) with an access time from clock of 5.4 ns (CAS latency = 3).
• Burst and Latency  Programmable burst length (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave) and selectable CAS latency (2 or 3 clocks).
• Refresh and Reliability  Auto Refresh and Self Refresh support with 8K refresh cycles every 64 ms to maintain data integrity.
• Interface and Signaling  Parallel memory interface with LVTTL-compatible signaling and random column address capability every clock cycle.
• Power  Nominal supply range listed as 3.0 V to 3.6 V (VDD/VDDQ for this device family).
• Package & Temperature  54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems  Provides 512 Mbit of synchronous DRAM in a 32M × 16 organization for systems using parallel DRAM buses.
• High-performance buffering  Programmable burst lengths and 166 MHz operation support burst read/write and high-throughput buffering needs.
• Industrial systems  Industrial temperature range (−40 °C to +85 °C) makes the device suitable for temperature-sensitive equipment requiring SDRAM storage.

Unique Advantages

• Synchronous pipeline architecture: Enables predictable, clock-aligned transfers with internal bank management to improve effective access performance.
• Flexible burst control: Programmable burst lengths and sequential/interleave options let designers optimize throughput and access patterns for their workload.
• Selectable CAS latency: CAS latency options (2 or 3 clocks) provide timing flexibility to match system clocking and performance targets.
• Robust refresh support: Auto Refresh and Self Refresh with 8K refresh cycles every 64 ms maintain data retention without external intervention.
• Industrial temperature rating: Rated for −40 °C to +85 °C, enabling use in environments with wider thermal ranges.
• Compact TSOP-II packaging: 54-pin TSOP-II (0.400", 10.16 mm width) offers a low-profile footprint for space-constrained boards.

Why Choose IS45S16320D-6CTLA1-TR?

This ISSI 512 Mbit SDRAM device combines a synchronous pipelined architecture, flexible burst and latency control, and industry-grade thermal range to serve designs that need reliable parallel DRAM storage at up to 166 MHz. Its internal bank structure and refresh features simplify memory management while supporting high-throughput burst operations.

The IS45S16320D-6CTLA1-TR is suited for designers and procurement teams specifying 32M × 16 parallel SDRAM in a compact TSOP-II package who require clear electrical and timing characteristics, industrial temperature capability, and programmable memory behaviors for integration into embedded and buffering applications.

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