IS45S16320D-7BLA2

The IS45S16320D-7BLA2 is a 512Mb synchronous DRAM (SDRAM) device organized as 32M × 16 with a parallel memory interface. It uses a pipeline architecture and fully synchronous operation with all signals referenced to the rising clock edge to enable high‑speed data transfers.

Designed for board‑level memory expansion and high‑speed buffering, this device supports a 143 MHz clock rate (‑7 speed grade), programmable burst operation and refresh modes, and operates across a supply range of 3.0 V to 3.6 V with an ambient temperature rating from −40 °C to 105 °C.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs referenced to the positive clock edge and internal bank structure for hiding row access/precharge.
• Memory Organization  512 Mbit capacity organized as 32M × 16 (configured as 8M × 16 × 4 banks).
• Performance & Timing  ‑7 speed grade supports a 143 MHz clock frequency; access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst & Refresh  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports auto refresh, self refresh and 8K refresh cycles per 64 ms.
• Interface  Parallel memory interface with LVTTL signaling for control and data paths; random column address every clock cycle.
• Power  Operates from 3.0 V to 3.6 V (VDD / VDDQ range as specified in the product data).
• Package  54‑ball TF‑BGA package (8 × 13) optimized for compact board footprint and high‑density mounting.
• Temperature Range  Rated for ambient operation from −40 °C to 105 °C (TA).

Typical Applications

• Board‑level memory expansion  Provides a 512Mb synchronous DRAM option for systems requiring parallel SDRAM memory on PCBs.
• High‑speed buffering  Pipeline architecture and 143 MHz operation support high‑throughput buffer memory and temporary data storage.
• Systems requiring wide temperature range  Suitable for designs that need operation from −40 °C to 105 °C, supporting industrial temperature environments.

Unique Advantages

• Deterministic, fully synchronous operation: Programmable CAS latency and clock‑referenced I/O simplify timing design and integration with synchronous systems.
• Flexible burst control: Programmable burst length and sequence enable efficient block transfers and tuning for different access patterns.
• Robust refresh management: Auto refresh and self refresh modes with 8K refresh cycles per 64 ms ensure data retention without external refresh logic.
• Compact BGA footprint: 54‑ball TF‑BGA (8×13) provides a space‑efficient package for high‑density PCB layouts.
• Wide supply and temperature ranges: 3.0–3.6 V supply range and −40 °C to 105 °C ambient rating support a variety of system power and environmental requirements.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS45S16320D-7BLA2 positions itself as a straightforward 512Mb SDRAM building block for designs that require synchronous, parallel memory with programmable timing and burst control. Its 32M × 16 organization, pipeline architecture and support for refresh and self‑refresh modes deliver predictable performance for board‑level memory and buffering tasks.

This device is well suited to engineers and procurement teams specifying compact, industrial‑temperature SDRAM with 54‑ball TF‑BGA packaging and a 3.0 V–3.6 V supply window. Its feature set supports scalable integration into systems that need configurable burst behavior, LVTTL interfacing and high‑speed synchronous operation.

Request a quote or submit an inquiry for pricing and availability to evaluate the IS45S16320D-7BLA2 for your next design.