IS45S16320D-7CTLA1-TR

The IS45S16320D-7CTLA1-TR is a 512 Mbit synchronous DRAM organized as 32M × 16 and implemented in a 54-pin TSOP-II package. It uses a fully synchronous pipeline architecture with a parallel memory interface designed for high-speed data transfer in synchronous systems.

Key value comes from its programmable burst operation, internal bank structure for hidden row access/precharge, and timing options tuned for a 143 MHz clock (–7 timing), making it suitable for designs that require predictable, low-latency SDRAM behavior within a compact TSOP footprint.

Key Features

• Memory Type & Capacity — 512 Mbit SDRAM organized as 32M × 16, providing a wide data path for parallel synchronous operations.
• Clocking & Performance — Supports −7 timing with a clock frequency of 143 MHz and an access time from clock of 5.4 ns (CAS latency options available), delivering deterministic synchronous read/write timing.
• Programmable Burst & CAS — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency (2 or 3 clocks) for flexible trade-offs between throughput and latency.
• Banking & Refresh — Internal bank architecture to hide row access/precharge and support for Auto Refresh and Self Refresh modes; 8K refresh cycles per 64 ms.
• Interface & Signaling — LVTTL-compatible parallel interface enabling random column access every clock cycle and standard synchronous control signaling referenced to the positive clock edge.
• Power — Supply voltage specified at 3.0 V to 3.6 V for the device variant, supporting common 3.3 V system rails.
• Package & Temperature — 54-pin TSOP-II (0.400", 10.16 mm width) package; operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Synchronous system memory — High-speed SDRAM for systems that require pipelined, clock-synchronous main or buffer memory with parallel access.
• Data buffering and burst transfer — Useful where programmable burst lengths and low-latency CAS options improve throughput for burst read/write operations.
• Compact board-level memory expansion — 54-TSOP-II package provides a space-efficient footprint for designs requiring 512 Mbit of parallel SDRAM.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous design with all signals referenced to the positive clock edge supports predictable timing and system integration.
• Flexible performance tuning: Programmable CAS latency and burst length/sequence allow optimization between latency and sustained throughput.
• High-frequency support: −7 timing rated for 143 MHz clock operation with 5.4 ns access time from clock, suitable for higher-speed synchronous designs.
• Robust refresh and low-power modes: Auto Refresh and Self Refresh support with standard 8K refresh cycles per 64 ms helps maintain data integrity across operating conditions.
• Compact package: 54-pin TSOP-II provides a narrow, board-friendly package option for space-constrained layouts.
• Wide operating voltage and temperature range: 3.0 V–3.6 V supply range and −40 °C to +85 °C operating temperature support common 3.3 V systems and extended temperature applications.

Why Choose IS45S16320D-7CTLA1-TR?

The IS45S16320D-7CTLA1-TR combines a compact 54-TSOP-II package with a fully synchronous SDRAM architecture and flexible timing options, making it a practical choice for designs that need 512 Mbit of parallel memory with predictable, low-latency behavior. Its programmable burst features, internal banking, and standard refresh mechanisms allow engineers to tune memory behavior for a range of synchronous data-transfer requirements.

This device is well suited to system designs that require a reliable, board-level SDRAM component with 143 MHz (−7) timing capability, LVTTL-compatible parallel interface, and an industrial-temperature range for extended deployments.

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