IS45S16320D-7TLA1-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 390 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0032

Overview of IS45S16320D-7TLA1-TR – IC DRAM 512Mbit PAR 54TSOP II

The IS45S16320D-7TLA1-TR is a 512Mbit synchronous DRAM organized as 32M × 16 with a parallel LVTTL interface and pipeline architecture. It delivers synchronous, high-speed data transfer with programmable burst lengths and internal bank management to optimize row access and precharge.

Designed for systems that require medium-density, high-throughput volatile memory, this device combines a compact 54-pin TSOP-II package, 3.0–3.6 V supply range, and an extended operating temperature rating to support a range of embedded and industrial memory subsystem designs.

Key Features

  • Memory Core  512 Mbit SDRAM organized as 32M × 16 with internal bank architecture for hidden row access/precharge.
  • Performance & Timing  Clock frequency supported at 143 MHz for the -7 timing grade with access time from clock as low as 5.4 ns (CAS latency = 3).
  • Burst & Latency  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave); programmable CAS latency options (2 or 3 clocks).
  • Refresh & Self-maintenance  Auto Refresh (CBR) and Self Refresh supported with 8K refresh cycles per 64 ms (standard refresh modes provided).
  • Power & Voltage  Operates from 3.0 V to 3.6 V (VDD/VDDQ specified), supporting standard 3.3 V system environments.
  • Interface  Parallel LVTTL-compatible interface with random column address capability every clock cycle and burst read/write operations.
  • Package & Mounting  Available in a 54-pin TSOP-II (0.400", 10.16 mm width) package for compact board-level integration.
  • Operating Temperature  Industrial temperature range: −40°C to +85°C (TA).

Typical Applications

  • Memory subsystems and buffers  Use where a 512 Mbit synchronous DRAM with 32M × 16 organization and programmable burst support is required for intermediate storage and buffering.
  • Embedded systems with parallel DRAM interface  Suited to designs that require a parallel LVTTL SDRAM interface and predictable, synchronous timing behavior.
  • Industrial equipment  Applicable for industrial designs needing extended temperature support (−40°C to +85°C) and stable 3.0–3.6 V supply operation.
  • High-throughput data applications  Systems that benefit from pipeline architecture, internal bank management and programmable burst modes to sustain frequent, high-speed memory accesses.

Unique Advantages

  • Deterministic synchronous operation: The device references all inputs and outputs to the positive clock edge, enabling predictable timing and pipeline data flow.
  • Flexible timing grades: Available timing grades include options up to 143 MHz for the -7 variant, with CAS latency options of 2 or 3 clocks to match system timing requirements.
  • Compact TSOP-II footprint: 54-pin TSOP-II package provides a space-efficient solution for board designs requiring 16-bit parallel SDRAM.
  • On-chip refresh and self-refresh: Auto Refresh (CBR) and Self Refresh features simplify external refresh control and support low-maintenance memory operation.
  • Wide supply tolerance: 3.0–3.6 V supply range gives compatibility with standard 3.3 V systems while allowing some supply variation tolerance.
  • Industrial temperature rating: Specified for −40°C to +85°C to support deployments in temperature-challenging environments.

Why Choose IS45S16320D-7TLA1-TR?

The IS45S16320D-7TLA1-TR is positioned for designs that need a reliable 512 Mbit synchronous DRAM with predictable, high-speed operation and flexible burst/latency control. Its pipeline architecture, internal bank management, and programmable operating modes provide designers with control over throughput and timing behavior.

This device is well suited to embedded and industrial memory subsystems that require a compact 54-pin TSOP-II package, a standard 3.0–3.6 V supply window, and an extended −40°C to +85°C operating range. Engineers seeking a straightforward, synchronous parallel DRAM building block for buffering, high-throughput access, and compact board layouts will find the IS45S16320D-7TLA1-TR aligned to those needs.

Request a quote or submit an RFQ to obtain pricing, availability, and lead-time information for the IS45S16320D-7TLA1-TR.

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