IS45S16320F-6BLA1

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 185 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16320F-6BLA1 – 512 Mbit Parallel SDRAM, 54‑TFBGA

The IS45S16320F-6BLA1 is a 512 Mbit volatile SDRAM organized as 32M × 16 with a parallel memory interface. Packaged in a 54‑TFBGA (54‑TW‑BGA, 8×13) package, it is specified for operation from −40°C to 85°C (TA) with a supply range of 3.0 V to 3.6 V.

Designed for systems that require parallel SDRAM storage, this device offers defined timing and electrical characteristics including a clock frequency of 167 MHz and an access time of 5.4 ns.

Key Features

  • Memory Type Volatile SDRAM providing 512 Mbit of dynamic memory storage.
  • Organization 32M × 16 organization for straightforward parallel data bus integration.
  • Performance Rated clock frequency of 167 MHz and an access time of 5.4 ns as specified.
  • Interface Parallel memory interface for conventional SDRAM system designs.
  • Power Operating supply voltage range from 3.0 V to 3.6 V.
  • Package 54‑TFBGA package (supplier device package listed as 54‑TW‑BGA, 8×13) for BGA mounting.
  • Temperature Range Specified operating ambient temperature range: −40°C to 85°C (TA).

Unique Advantages

  • 512 Mbit capacity: Provides a substantial memory footprint in a single SDRAM device for systems requiring mid-density DRAM.
  • 32M × 16 organization: Simplifies bus interfacing and address mapping in parallel SDRAM implementations.
  • Defined timing performance: 167 MHz clock rating and 5.4 ns access time give clear, verifiable timing characteristics for system timing budgets.
  • Wide supply tolerance: 3.0 V to 3.6 V supply range supports designs operating at common 3.3 V logic domains.
  • Industrial temperature range: −40°C to 85°C (TA) allows deployment across a wide range of ambient conditions.
  • BGA package footprint: 54‑TFBGA (54‑TW‑BGA, 8×13) offers a compact surface-mount solution for space-constrained PCBs.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS45S16320F-6BLA1 positions as a straightforward, specification-driven SDRAM option when a 512 Mbit parallel DRAM is required. Its 32M × 16 organization, fixed timing metrics (167 MHz clock, 5.4 ns access), and 3.0 V–3.6 V supply range provide clear parameters for integration into parallel-memory systems.

This device is well suited for designs that value a defined electrical and thermal envelope—offering a compact 54‑TFBGA package and an ambient operating range from −40°C to 85°C—so engineers can plan PCB layout, power rails, and thermal considerations with the published specs in hand.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS45S16320F-6BLA1.

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