IS45S16320F-6TLA1-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 889 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16320F-6TLA1-TR – IC DRAM 512MBIT PAR 54TSOP II

The IS45S16320F-6TLA1-TR is a 512 Mbit volatile SDRAM organized as 32M x 16 with a parallel memory interface. It delivers 167 MHz clock operation and a 5.4 ns access time in a compact 54‑TSOP II package.

This device is intended for board-level memory expansion where parallel SDRAM is required, offering a defined voltage range and extended ambient operating temperature for a range of electronic systems.

Key Features

  • Memory Type & Technology  Volatile DRAM implemented as SDRAM; memory organization is 32M x 16 for a total of 512 Mbit.
  • Performance  Supports a 167 MHz clock frequency with a typical access time of 5.4 ns for responsive read/write cycles.
  • Interface  Parallel memory interface for direct board-level integration with systems that require parallel SDRAM connectivity.
  • Power  Operates from 3.0 V to 3.6 V supply, matching common 3.3 V system power rails.
  • Package  Supplied in a 54‑TSOP II package (0.400", 10.16 mm width) to support compact PCB layouts and standard TSOP assembly flows.
  • Operating Temperature  Rated for ambient operation from -40°C to 85°C (TA).

Typical Applications

  • Board‑level memory expansion  Use as high-density parallel SDRAM to increase system DRAM capacity on PCBs and modules.
  • Embedded system memory  Provides main or auxiliary volatile memory for embedded controllers and processors requiring a parallel SDRAM interface.
  • High-speed buffering  Serves as frame or data buffer memory in designs that benefit from 167 MHz clocking and low access latency.

Unique Advantages

  • 512 Mbit density  Compact 32M x 16 organization delivers substantial on-board DRAM capacity without enlarging PCB footprint.
  • Fast access and clocking  5.4 ns access time and 167 MHz clock support responsive memory operations for timing-sensitive applications.
  • Standard 3.3 V compatibility  3.0 V–3.6 V supply range aligns with common 3.3 V system rails for straightforward power integration.
  • Compact TSOP II package  54‑TSOP (0.400", 10.16 mm) package supports high-density board layouts and established assembly processes.
  • Extended operating temperature  -40°C to 85°C ambient rating supports deployment across a wide range of environmental conditions.

Why Choose IS45S16320F-6TLA1-TR?

The IS45S16320F-6TLA1-TR positions itself as a reliable parallel SDRAM building block offering 512 Mbit density, established SDRAM architecture, and performance characteristics (167 MHz clock, 5.4 ns access) suitable for systems that require responsive volatile memory. Its 54‑TSOP II package and 3.0 V–3.6 V supply range simplify integration into compact, standard 3.3 V designs.

This device is well suited for designers seeking a straightforward, high-density SDRAM solution for board-level memory expansion, buffering, or embedded system memory where documented operating temperature and package dimensions are key selection criteria.

Request a quote or submit an inquiry to sales for pricing, availability and lead-time information for IS45S16320F-6TLA1-TR.

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