IS45S16320F-6TLA1-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 889 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-6TLA1-TR – IC DRAM 512MBIT PAR 54TSOP II
The IS45S16320F-6TLA1-TR is a 512 Mbit volatile SDRAM organized as 32M x 16 with a parallel memory interface. It delivers 167 MHz clock operation and a 5.4 ns access time in a compact 54‑TSOP II package.
This device is intended for board-level memory expansion where parallel SDRAM is required, offering a defined voltage range and extended ambient operating temperature for a range of electronic systems.
Key Features
- Memory Type & Technology Volatile DRAM implemented as SDRAM; memory organization is 32M x 16 for a total of 512 Mbit.
- Performance Supports a 167 MHz clock frequency with a typical access time of 5.4 ns for responsive read/write cycles.
- Interface Parallel memory interface for direct board-level integration with systems that require parallel SDRAM connectivity.
- Power Operates from 3.0 V to 3.6 V supply, matching common 3.3 V system power rails.
- Package Supplied in a 54‑TSOP II package (0.400", 10.16 mm width) to support compact PCB layouts and standard TSOP assembly flows.
- Operating Temperature Rated for ambient operation from -40°C to 85°C (TA).
Typical Applications
- Board‑level memory expansion Use as high-density parallel SDRAM to increase system DRAM capacity on PCBs and modules.
- Embedded system memory Provides main or auxiliary volatile memory for embedded controllers and processors requiring a parallel SDRAM interface.
- High-speed buffering Serves as frame or data buffer memory in designs that benefit from 167 MHz clocking and low access latency.
Unique Advantages
- 512 Mbit density Compact 32M x 16 organization delivers substantial on-board DRAM capacity without enlarging PCB footprint.
- Fast access and clocking 5.4 ns access time and 167 MHz clock support responsive memory operations for timing-sensitive applications.
- Standard 3.3 V compatibility 3.0 V–3.6 V supply range aligns with common 3.3 V system rails for straightforward power integration.
- Compact TSOP II package 54‑TSOP (0.400", 10.16 mm) package supports high-density board layouts and established assembly processes.
- Extended operating temperature -40°C to 85°C ambient rating supports deployment across a wide range of environmental conditions.
Why Choose IS45S16320F-6TLA1-TR?
The IS45S16320F-6TLA1-TR positions itself as a reliable parallel SDRAM building block offering 512 Mbit density, established SDRAM architecture, and performance characteristics (167 MHz clock, 5.4 ns access) suitable for systems that require responsive volatile memory. Its 54‑TSOP II package and 3.0 V–3.6 V supply range simplify integration into compact, standard 3.3 V designs.
This device is well suited for designers seeking a straightforward, high-density SDRAM solution for board-level memory expansion, buffering, or embedded system memory where documented operating temperature and package dimensions are key selection criteria.
Request a quote or submit an inquiry to sales for pricing, availability and lead-time information for IS45S16320F-6TLA1-TR.