IS45S16320F-6CTLA1
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,970 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-6CTLA1 – IC DRAM 512Mbit PAR 54TSOP II
The IS45S16320F-6CTLA1 is a volatile SDRAM device organized as 32M x 16 for a total memory capacity of 512 Mbit. It implements a parallel memory interface and is packaged in a 54-TSOP II form factor.
Engineered for applications that require medium-density SDRAM with a 167 MHz clock capability and a 5.4 ns access time, this device operates across a 3.0 V to 3.6 V supply range and a temperature range of -40°C to 85°C.
Key Features
- Memory Architecture 512 Mbit capacity organized as 32M x 16 provides a balanced density and 16-bit data path for parallel system integration.
- SDRAM Performance Supports a clock frequency up to 167 MHz with an access time of 5.4 ns, enabling deterministic access characteristics for synchronous designs.
- Interface & Organization Parallel memory interface with standard DRAM format suitable for systems designed around synchronous parallel memory buses.
- Power Supply Operates from 3.0 V to 3.6 V, supporting common 3.3 V system rails.
- Package 54-TSOP II (0.400", 10.16 mm width) package provides a compact surface-mount footprint for board-level integration.
- Operating Temperature Specified for -40°C to 85°C (TA), allowing deployment across a wide ambient temperature range.
- Manufacturer Supplied by ISSI (Integrated Silicon Solution Inc.).
Unique Advantages
- Medium-density memory capacity: 512 Mbit (32M x 16) delivers sufficient storage for designs requiring significant volatile memory without moving to higher-capacity part families.
- Synchronous performance: 167 MHz clock and 5.4 ns access time provide predictable timing for systems using synchronous DRAM.
- Standard 3.3 V compatibility: 3.0 V to 3.6 V supply range aligns with common 3.3 V system power rails for straightforward power integration.
- Compact board footprint: 54-TSOP II package (10.16 mm width) supports dense PCB layouts while maintaining a standard surface-mount form factor.
- Wide ambient range: -40°C to 85°C operating temperature supports deployment in demanding thermal environments.
Why Choose IS45S16320F-6CTLA1?
The IS45S16320F-6CTLA1 combines a 512 Mbit SDRAM architecture with synchronous performance characteristics and a compact 54-TSOP II package, making it a practical choice for systems that require reliable parallel DRAM with predictable timing. Its 3.0 V–3.6 V supply range and -40°C to 85°C rating allow integration into a variety of embedded and industrial designs.
Manufactured by ISSI, this device is suited for designers seeking a medium-density SDRAM with defined performance and package attributes for long-term design integration and predictable system behavior.
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