IS45S16320F-7BLA1-TR

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 793 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16320F-7BLA1-TR – IC DRAM 512MBIT PAR 54TFBGA

The IS45S16320F-7BLA1-TR is a volatile SDRAM device from ISSI providing 512 Mbit of DRAM organized as 32M × 16 with a parallel memory interface. It is delivered in a 54-TFBGA package (listed as 54-TW-BGA, 8×13 footprint).

Designed for applications requiring fast parallel SDRAM access, the device supports a 143 MHz clock frequency with a 5.4 ns access time, operates over a 3.0 V to 3.6 V supply range, and is specified for an ambient operating temperature range of -40°C to 85°C.

Key Features

  • Memory Core 512 Mbit DRAM organized as 32M × 16, volatile memory format implemented with SDRAM technology.
  • Performance Supports a 143 MHz clock frequency and an access time of 5.4 ns for low-latency read/write operations.
  • Interface Parallel memory interface suitable for systems that require parallel DRAM connectivity.
  • Power Operates from a 3.0 V to 3.6 V supply voltage range.
  • Package Supplied in a 54-TFBGA (54-TW-BGA, 8×13) package for compact board-level integration.
  • Environmental Range Specified operating ambient temperature range of -40°C to 85°C (TA).

Unique Advantages

  • High-density memory: 512 Mbit capacity in a single-device SDRAM reduces board-level component count for mid-density memory needs.
  • Fast access and clocking: 5.4 ns access time and 143 MHz clock support applications that require quick memory response.
  • Standard parallel interface: Parallel memory interface simplifies integration into systems designed for parallel DRAM connectivity.
  • Wide supply tolerance: 3.0 V to 3.6 V operation provides compatibility with common 3 V memory power rails.
  • Compact BGA package: 54-TFBGA (8×13) footprint enables space-efficient board designs.
  • Extended operating temperature: -40°C to 85°C rating supports a broad range of ambient conditions.

Why Choose IS45S16320F-7BLA1-TR?

The IS45S16320F-7BLA1-TR combines 512 Mbit SDRAM capacity, a parallel interface, and measured performance (143 MHz clock, 5.4 ns access time) in a compact 54-TFBGA package, making it suitable for designs that require mid-density, fast volatile memory with a small board footprint. Its 3.0 V–3.6 V supply range and -40°C to 85°C operating window provide practical flexibility for many embedded environments.

This device is appropriate for engineers and procurement teams targeting systems that need verified SDRAM performance and straightforward parallel integration while retaining compact packaging and broad operating conditions.

Request a quote or submit an inquiry for IS45S16320F-7BLA1-TR to obtain pricing and availability information tailored to your project needs.

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