IS45S16320F-7BLA2-TR
| Part Description |
IC DRAM 512MBIT PAR 54TFBGA |
|---|---|
| Quantity | 663 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TW-BGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-7BLA2-TR – 512 Mbit Parallel SDRAM, 54-TFBGA
The IS45S16320F-7BLA2-TR is a volatile SDRAM memory device providing 512 Mbit of storage arranged as 32M × 16. It implements a parallel memory interface and is supplied in a 54-TFBGA (54-TW-BGA, 8 × 13) package.
Designed for systems that require fast, parallel-access DRAM, the device offers a clock frequency of up to 143 MHz and an access time of 5.4 ns, operating from a 3.0 V to 3.6 V supply and across an ambient temperature range of −40 °C to 105 °C.
Key Features
- Memory Core 512 Mbit density organized as 32M × 16, provided as volatile DRAM for parallel memory applications.
- Technology & Performance SDRAM technology with a clock frequency of 143 MHz and an access time of 5.4 ns to support time-sensitive read/write operations.
- Interface Parallel memory interface suitable for systems that require parallel DRAM connectivity and addressing.
- Power Operates from a 3.0 V to 3.6 V supply range, enabling compatibility with standard 3 V systems.
- Package 54-TFBGA (supplier package: 54-TW-BGA, 8 × 13) for compact board-level integration.
- Operating Temperature Specified ambient temperature range of −40 °C to 105 °C for extended temperature operation.
Typical Applications
- Embedded Systems Use as parallel SDRAM memory where 32M × 16 organization and 512 Mbit capacity are required for system memory expansion.
- Industrial Equipment Suitable for systems that need DRAM operation across −40 °C to 105 °C and a 3.0 V–3.6 V power rail.
- Board-Level Memory Integration on PCBs requiring a compact 54-TFBGA footprint and a parallel SDRAM interface.
Unique Advantages
- High-density memory: 512 Mbit capacity in a 32M × 16 organization provides substantial on-board DRAM storage.
- Deterministic performance: 143 MHz clock frequency and 5.4 ns access time support responsive parallel memory transactions.
- Standard 3 V supply compatibility: Operates from 3.0 V to 3.6 V to match common system power rails.
- Compact BGA package: 54-TFBGA (54-TW-BGA, 8 × 13) enables dense PCB integration while maintaining a defined package outline.
- Wide operating temperature: Specified for −40 °C to 105 °C to accommodate applications with broad ambient temperature requirements.
Why Choose IS45S16320F-7BLA2-TR?
The IS45S16320F-7BLA2-TR delivers a straightforward parallel SDRAM solution with clear, verifiable specifications for capacity, timing, supply range, and thermal operation. It is suited to designs that require 512 Mbit of volatile SDRAM in a 32M × 16 organization with a compact 54-TFBGA footprint.
Engineers specifying this device benefit from predictable timing (143 MHz clock, 5.4 ns access) and defined electrical and environmental limits (3.0–3.6 V, −40 °C to 105 °C), making it appropriate for systems with these exacting requirements.
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