IS45S16320F-7BLA2-TR

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 663 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS45S16320F-7BLA2-TR – 512 Mbit Parallel SDRAM, 54-TFBGA

The IS45S16320F-7BLA2-TR is a volatile SDRAM memory device providing 512 Mbit of storage arranged as 32M × 16. It implements a parallel memory interface and is supplied in a 54-TFBGA (54-TW-BGA, 8 × 13) package.

Designed for systems that require fast, parallel-access DRAM, the device offers a clock frequency of up to 143 MHz and an access time of 5.4 ns, operating from a 3.0 V to 3.6 V supply and across an ambient temperature range of −40 °C to 105 °C.

Key Features

  • Memory Core 512 Mbit density organized as 32M × 16, provided as volatile DRAM for parallel memory applications.
  • Technology & Performance SDRAM technology with a clock frequency of 143 MHz and an access time of 5.4 ns to support time-sensitive read/write operations.
  • Interface Parallel memory interface suitable for systems that require parallel DRAM connectivity and addressing.
  • Power Operates from a 3.0 V to 3.6 V supply range, enabling compatibility with standard 3 V systems.
  • Package 54-TFBGA (supplier package: 54-TW-BGA, 8 × 13) for compact board-level integration.
  • Operating Temperature Specified ambient temperature range of −40 °C to 105 °C for extended temperature operation.

Typical Applications

  • Embedded Systems Use as parallel SDRAM memory where 32M × 16 organization and 512 Mbit capacity are required for system memory expansion.
  • Industrial Equipment Suitable for systems that need DRAM operation across −40 °C to 105 °C and a 3.0 V–3.6 V power rail.
  • Board-Level Memory Integration on PCBs requiring a compact 54-TFBGA footprint and a parallel SDRAM interface.

Unique Advantages

  • High-density memory: 512 Mbit capacity in a 32M × 16 organization provides substantial on-board DRAM storage.
  • Deterministic performance: 143 MHz clock frequency and 5.4 ns access time support responsive parallel memory transactions.
  • Standard 3 V supply compatibility: Operates from 3.0 V to 3.6 V to match common system power rails.
  • Compact BGA package: 54-TFBGA (54-TW-BGA, 8 × 13) enables dense PCB integration while maintaining a defined package outline.
  • Wide operating temperature: Specified for −40 °C to 105 °C to accommodate applications with broad ambient temperature requirements.

Why Choose IS45S16320F-7BLA2-TR?

The IS45S16320F-7BLA2-TR delivers a straightforward parallel SDRAM solution with clear, verifiable specifications for capacity, timing, supply range, and thermal operation. It is suited to designs that require 512 Mbit of volatile SDRAM in a 32M × 16 organization with a compact 54-TFBGA footprint.

Engineers specifying this device benefit from predictable timing (143 MHz clock, 5.4 ns access) and defined electrical and environmental limits (3.0–3.6 V, −40 °C to 105 °C), making it appropriate for systems with these exacting requirements.

Request a quote or submit an inquiry to begin the procurement process for IS45S16320F-7BLA2-TR.

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