IS45S16320F-7TLA1
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 193 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-7TLA1 – IC DRAM 512 Mbit Parallel 54-TSOP II
The IS45S16320F-7TLA1 is a 512 Mbit SDRAM organized as 32M × 16 with a parallel memory interface. It delivers mid-density volatile memory in a compact 54‑TSOP II package for designs that require on-board DRAM storage.
Key differentiators include a 143 MHz clock rating and 5.4 ns access time for responsive memory access, a 3.0–3.6 V supply range, and an operating temperature range of −40°C to 85°C for deployment across a range of thermal conditions.
Key Features
- Memory Core SDRAM, volatile memory with a total capacity of 512 Mbit organized as 32M × 16.
- Performance Clock frequency rated at 143 MHz with an access time of 5.4 ns.
- Interface Parallel memory interface suitable for bus-based DRAM integration.
- Power Voltage supply range from 3.0 V to 3.6 V.
- Package 54‑TSOP II (0.400", 10.16 mm width) supplier device package for compact board-level placement.
- Operating Temperature Specified operating range of −40°C to 85°C (TA).
- Memory Format & Mounting DRAM memory format; memory type specified as volatile.
Typical Applications
- Embedded Systems Provides 512 Mbit parallel SDRAM for embedded designs requiring 32M × 16 memory organization and up to 143 MHz operation.
- Consumer Electronics Mid-density DRAM in a 54‑TSOP II package for compact consumer devices operating within a 3.0–3.6 V domain.
- Industrial Equipment Operational range of −40°C to 85°C supports deployment in industrial environments with extended temperature requirements.
Unique Advantages
- Mid-density memory capacity: 512 Mbit enables substantive on-board storage without large package footprints.
- Compact package: 54‑TSOP II (0.400", 10.16 mm) helps minimize PCB area for space-constrained designs.
- Responsive timing: 143 MHz clock and 5.4 ns access time support timely data access for parallel bus architectures.
- Flexible power envelope: 3.0–3.6 V supply accommodates common 3 V system domains.
- Wide temperature operation: −40°C to 85°C enables use across a broad range of thermal conditions.
Why Choose IS45S16320F-7TLA1?
The IS45S16320F-7TLA1 from ISSI is positioned as a mid-density parallel SDRAM option that balances capacity, timing, and compact packaging. Its 32M × 16 organization and 512 Mbit capacity make it suitable for designs that require straightforward parallel DRAM integration with defined timing and power characteristics.
Engineers and procurement teams seeking a compact 54‑TSOP II SDRAM solution with a 143 MHz rating, 5.4 ns access time, a 3.0–3.6 V supply range, and −40°C to 85°C operating capability will find this device appropriate for embedded, consumer, and industrial applications where these specific specifications are required.
Request a quote or submit a parts inquiry to receive pricing and availability information for IS45S16320F-7TLA1.
