IS45S16320F-7CTLA2
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 855 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-7CTLA2 – 512 Mbit SDRAM, 54‑TSOP II
The IS45S16320F-7CTLA2 is a volatile SDRAM device providing 512 Mbit of parallel DRAM capacity in a 32M × 16 organization. It delivers system memory with a 143 MHz clock rating and a 5.4 ns access time, suitable for designs that require mid‑density, parallel SDRAM storage.
Packaged in a 54‑TSOP II form factor with a 10.16 mm (0.400") width and supporting a 3.0–3.6 V supply range, the device is specified for operation from −40°C to 105°C (TA).
Key Features
- Memory Core 512 Mbit SDRAM organized as 32M × 16, providing a parallel DRAM memory format for system buffering and storage.
- Performance Rated for a 143 MHz clock frequency with a 5.4 ns access time to support moderate‑speed memory access requirements.
- Power Operates from a 3.0–3.6 V supply range, matching common 3 V SDRAM system power rails.
- Package Available in a 54‑TSOP II (0.400", 10.16 mm width) package for compact PCB footprints.
- Temperature Range Specified for operation from −40°C to 105°C (TA), enabling use across a broad ambient temperature window.
- Interface Parallel memory interface suitable for designs that integrate SDRAM as a discrete system memory component.
Typical Applications
- Systems requiring parallel SDRAM For designs that need 512 Mbit of volatile DRAM with a parallel interface and 32M × 16 organization.
- Temperature‑variant environments Use in equipment operating across −40°C to 105°C where a specified operating range is required.
- Space‑constrained PCBs The 54‑TSOP II package suits boards that need compact, low‑profile DRAM placement.
Unique Advantages
- High density in a compact package: 512 Mbit capacity in a 54‑TSOP II (10.16 mm) package minimizes board area for memory implementation.
- Determinable performance: 143 MHz clock rating and 5.4 ns access time provide quantifiable memory timing for system design and verification.
- Wide supply tolerance: 3.0–3.6 V operation aligns with common 3 V SDRAM rails for straightforward power integration.
- Broad operating temperature: −40°C to 105°C (TA) supports deployment across a wide range of ambient conditions.
- Parallel memory organization: 32M × 16 layout simplifies interface expectations for controllers designed for parallel SDRAM.
Why Choose IS45S16320F-7CTLA2?
The IS45S16320F-7CTLA2 is positioned for designs that require a clear, mid‑density SDRAM solution with defined timing and packaging characteristics. Its 512 Mbit capacity, 143 MHz clock rating, and 5.4 ns access time deliver predictable memory performance while the 54‑TSOP II package and 3.0–3.6 V operation simplify integration into compact, 3 V systems.
Engineers specifying this device benefit from a straightforward, parallel DRAM option with a wide operating temperature range, making it suitable for applications where verified memory timing, board‑space efficiency, and ambient temperature tolerance are primary concerns.
Request a quote or contact sales to discuss availability, pricing, and lead times for IS45S16320F-7CTLA2.
