IS45S16320F-7TLA2
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,110 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-7TLA2 – IC DRAM 512MBIT PAR 54TSOP II
The IS45S16320F-7TLA2 is a 512 Mbit volatile SDRAM device from Integrated Silicon Solution Inc (ISSI). It implements a 32M × 16 memory organization with a parallel SDRAM interface.
Designed for systems that require a 512 Mbit parallel SDRAM memory component, this device offers a defined operating range and packaging option suitable for compact board-level integration.
Key Features
- Memory Type & Technology 512 Mbit volatile memory implemented as SDRAM (DRAM format), suitable for applications requiring standard synchronous DRAM behavior.
- Organization 32M × 16 organization to provide the specified 512 Mbit capacity in a parallel data configuration.
- Interface Parallel memory interface for integration into systems using parallel SDRAM buses.
- Performance Clock frequency specified at 143 MHz with an access time of 5.4 ns for timing reference in system designs.
- Supply Voltage Operates from 3.0 V to 3.6 V, enabling compatibility with standard 3 V SDRAM power rails.
- Package Supplied in a 54-TSOP II package (0.400", 10.16 mm width) for compact PCB footprint and surface-mount mounting.
- Operating Temperature Specified operating temperature range from −40 °C to 105 °C (TA), supporting extended temperature environments.
Unique Advantages
- 512 Mbit density in a compact package: 32M × 16 organization provides substantial memory capacity in a 54-TSOP II footprint for space-constrained designs.
- Defined timing characteristics: 143 MHz clock frequency and 5.4 ns access time provide concrete timing parameters for system-level memory planning.
- Standard 3 V power domain: 3.0–3.6 V supply range aligns with common SDRAM power rails for straightforward power design.
- Wide operating temperature: −40 °C to 105 °C rating supports deployment in systems that require extended temperature operation.
- Surface-mount 54-TSOP II package: Enables compact board layout and compatibility with automated assembly processes.
- Manufacturer provenance: Supplied by Integrated Silicon Solution Inc (ISSI), identifying the device source for procurement and specification tracking.
Why Choose IS45S16320F-7TLA2?
The IS45S16320F-7TLA2 is positioned for designs that need a clearly specified 512 Mbit parallel SDRAM device with documented timing, supply, and thermal parameters. Its 32M × 16 organization, 143 MHz clock rating, and 5.4 ns access time deliver concrete performance inputs for memory subsystem design.
This device is suitable for engineers and procurement teams seeking a compact 54-TSOP II packaged SDRAM with a standard 3.0–3.6 V supply range and an extended operating temperature rating of −40 °C to 105 °C. Manufacturer identification (Integrated Silicon Solution Inc) is provided for traceability in design and sourcing.
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