IS45S16320F-7TLA2-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 529 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 16 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS45S16320F-7TLA2-TR – IC DRAM 512Mbit Parallel SDRAM, 54‑TSOP II
The IS45S16320F-7TLA2-TR is a 512 Mbit volatile SDRAM device organized as 32M × 16 with a parallel memory interface and manufactured by Integrated Silicon Solution Inc (ISSI). It is offered in a 54‑pin TSOP II package and is specified for operation from -40°C to 105°C with a supply range of 3.0 V to 3.6 V.
This device targets designs that require a 512 Mbit parallel SDRAM solution with defined timing characteristics, including a clock frequency of 143 MHz and an access time of 5.4 ns, in a compact 54‑TSOP II footprint.
Key Features
- Memory Core 512 Mbit SDRAM organized as 32M × 16, providing a single-device memory solution for parallel 16-bit bus architectures.
- Technology SDRAM volatile memory technology suitable for applications requiring synchronous DRAM operation.
- Performance Specified clock frequency of 143 MHz and access time of 5.4 ns to support defined timing requirements.
- Interface Parallel memory interface with 16-bit organization (32M × 16) for direct integration with parallel memory buses.
- Power Operates from a 3.0 V to 3.6 V supply range, matching common 3.3 V system power rails.
- Package & Mounting 54‑TSOP II (0.400", 10.16 mm width) package for surface-mount assembly and compact board-level integration.
- Operating Temperature Specified ambient operating range of -40°C to 105°C (TA) for extended-temperature applications.
Typical Applications
- Embedded systems Use as parallel SDRAM storage where a 32M × 16 memory organization and 512 Mbit density are required for system buffers or working memory.
- Board-level memory expansion Integration on PCBs needing a compact 54‑TSOP II packaged DRAM device to add 512 Mbit of parallel SDRAM capacity.
- Industrial designs Applications that benefit from the -40°C to 105°C operating range and standard 3.0 V–3.6 V supply for extended-temperature operation.
Unique Advantages
- 512 Mbit density: Provides substantial single-device memory capacity to reduce component count and simplify memory subsystem design.
- 32M × 16 organization: Native 16-bit data width enables straightforward interfacing to 16-bit parallel buses without additional signal translation.
- Defined timing performance: 143 MHz clock frequency and 5.4 ns access time allow designers to plan for specific latency and throughput requirements.
- Wide supply tolerance: 3.0 V to 3.6 V operation aligns with common 3.3 V system rails for compatibility with standard power architectures.
- Compact TSOP II packaging: 54‑pin TSOP II (10.16 mm width) offers a space-efficient form factor for high-density PCB layouts.
- Extended temperature capability: Rated for -40°C to 105°C ambient operation to support designs in broader environmental conditions.
Why Choose IS45S16320F-7TLA2-TR?
IS45S16320F-7TLA2-TR combines a 512 Mbit SDRAM capacity with a 32M × 16 organization and a parallel interface, delivering a predictable memory building block for systems that require defined timing and a compact package. Its specified 143 MHz clock and 5.4 ns access time, together with a 3.0 V–3.6 V supply range and extended temperature rating, make it suitable for designs where a verified SDRAM footprint and environmental tolerance are important.
This device is appropriate for engineers and procurement teams seeking a high-density parallel SDRAM in a 54‑TSOP II package for embedded, board-level, or industrial memory applications where clear electrical and thermal specifications are required.
Request a quote or submit a pricing and availability inquiry for IS45S16320F-7TLA2-TR to obtain lead-time and ordering information.