IS45S16400F-6BLA1-TR

The IS45S16400F-6BLA1-TR is a 64 Mbit synchronous DRAM (SDRAM) device organized as 1,048,576 bits × 16 × 4 banks. It implements a fully synchronous pipeline architecture with a parallel LVTTL interface for high-speed, clock-referenced memory operations.

Designed for systems requiring compact parallel DRAM with programmable burst modes and low access latency, this device addresses applications that need deterministic, synchronous memory performance within a −40°C to +85°C ambient range.

Key Features

• Core / Architecture  Fully synchronous SDRAM with all signals referenced to the rising clock edge and internal bank architecture to hide row access/precharge latency.
• Memory Organization  64 Mbit capacity organized as 4M × 16 × 4 banks (1,048,576 bits × 16 × 4 banks) for parallel 16-bit data transfers.
• Performance  166 MHz clock option (part suffix -6) with typical access time from clock of 5.4 ns and programmable CAS latency (2 or 3 clocks) to tune read latency.
• Burst & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Power Modes  Supports self-refresh and auto-refresh (CBR); datasheet specifies 4096 refresh cycles every 64 ms for commercial/industrial/A1 grades.
• Interface & Signaling  LVTTL interface with parallel memory bus for synchronous system integration.
• Power & Supply  Single-supply operation in the 3.0 V to 3.6 V range (typical 3.3 V operation).
• Package & Temperature  54-ball TFBGA (8 mm × 8 mm) package with operating ambient temperature range of −40°C to +85°C (TA).

Typical Applications

• Parallel SDRAM memory subsystems  Used where a 64 Mbit synchronous parallel DRAM is required for buffered, clocked memory access.
• High-speed buffering  Suitable for designs that leverage programmable burst lengths and sequences to optimize sustained data transfers.
• Industrial electronics  Operates across a −40°C to +85°C ambient range for temperature-robust embedded systems.

Unique Advantages

• Deterministic synchronous operation: Fully synchronous design with clock-referenced inputs and outputs simplifies timing analysis and system integration.
• Flexible burst control: Programmable burst lengths and sequences allow designers to match memory transfers to system data patterns and throughput needs.
• Low read latency options: Programmable CAS latency (2 or 3 clocks) and access time from clock as low as 5.4 ns enable low-latency reads when required.
• Compact BGA footprint: 54-ball TFBGA (8×8 mm) package reduces PCB area for space-constrained designs.
• Robust refresh management: Supports self-refresh and auto-refresh modes with 4096 refresh cycles per 64 ms for applicable grades to maintain data integrity.
• Standard 3.3 V supply: Single 3.0 V–3.6 V supply range simplifies power rail design in systems using 3.3 V logic.

Why Choose IS45S16400F-6BLA1-TR?

The IS45S16400F-6BLA1-TR provides a compact, fully synchronous 64 Mbit DRAM option that balances low latency, programmable burst flexibility, and a parallel LVTTL interface for straightforward integration into clocked memory subsystems. Its 4-bank architecture and pipeline operation support continuous high-speed transfers while simplifying row/column management.

This device is suited to designers and engineers building embedded systems or memory buffers that require a verified SDRAM solution with a known operating voltage range and ambient temperature rating. Technical details and timing parameters are documented in the device specification for system-level design and timing closure.

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