IS45S16320F-7TLA1-TR

The IS45S16320F-7TLA1-TR is a 512 Mbit volatile DRAM device implemented as SDRAM with a parallel memory interface. It is organized as 32M × 16 and designed for systems that require mid-density synchronous DRAM with defined performance and package characteristics.

Manufactured by Integrated Silicon Solution Inc, this device targets applications that need a parallel DRAM solution with a 54-TSOP II package, 3.0–3.6 V supply range and an extended operating temperature range of -40°C to 85°C.

Key Features

• Memory Architecture 512 Mbit capacity organized as 32M × 16 in SDRAM format, providing a straightforward parallel memory configuration.
• Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, enabling predictable timing for synchronous memory designs.
• Interface Parallel memory interface suitable for systems designed around parallel DRAM connectivity.
• Power Operates from a 3.0 V to 3.6 V supply range, compatible with standard 3 V SDRAM power domains.
• Package & Mounting Supplied in a 54-TSOP II (0.400", 10.16 mm width) package for surface-mount board assembly.
• Temperature Range Rated for operation from -40°C to 85°C (TA), covering broad ambient conditions.
• Volatile Memory Classified as volatile DRAM; data is not retained without power.

Typical Applications

• System memory (parallel DRAM) Acts as 512 Mbit parallel SDRAM (32M × 16) for systems requiring synchronous DRAM with a 143 MHz clock.
• Frame buffering / data buffering Provides mid-density storage where a 5.4 ns access time and parallel interface are required for temporary data storage and throughput.
• Embedded memory expansion Used to expand external memory capacity in embedded designs that accept a 54-TSOP II package and 3.0–3.6 V supply.

Unique Advantages

• 512 Mbit density: Enables significant external memory capacity in a single 54-TSOP II device, reducing board area compared to multiple smaller devices.
• Synchronous operation at 143 MHz: Provides defined timing and predictable performance for systems designed around the device’s clock and access-time characteristics.
• Industry-standard package: The 54-TSOP II (10.16 mm width) package supports compact surface-mount layouts and common assembly processes.
• Wide ambient temperature range: Rated from -40°C to 85°C to meet designs with extended environmental requirements.
• Flexible supply range: 3.0 V to 3.6 V operation accommodates common 3 V power domains.

Why Choose IS45S16320F-7TLA1-TR?

The IS45S16320F-7TLA1-TR positions itself as a mid-density SDRAM option for designs that need 512 Mbit of volatile parallel memory with defined timing and environmental ratings. Its 32M × 16 organization, 143 MHz clock support and 5.4 ns access time provide concrete electrical characteristics for system integration.

Manufactured by Integrated Silicon Solution Inc, this device is suitable for engineers and procurement teams specifying a 54-TSOP II packaged SDRAM operating at 3.0–3.6 V and across -40°C to 85°C ambient conditions.

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