IS45S16400F-6BLA1

The IS45S16400F-6BLA1 is a 64Mbit synchronous dynamic RAM organized as 1,048,576 × 16 × 4 banks. It is a fully synchronous, pipelined SDRAM provided in a 54-ball TFBGA (8mm × 8mm) package with a parallel memory interface.

Designed for systems that require compact, high-speed parallel DRAM, this device delivers selectable clock performance and programmable burst options while operating from a single 3.3V-class supply and supporting industrial temperature ranges.

Key Features

• Core Architecture  The device is organized as 4M × 16 across 4 internal banks (1,048,576 bits × 16 × 4 banks) for improved access patterns and bank interleaving.
• Synchronous SDRAM  Fully synchronous operation with all signals referenced to the rising clock edge and pipeline architecture for high-speed transfers.
• Clock Performance  Available clock-frequency options include 200, 166, 143 and 133 MHz; this part is specified at the 166 MHz grade with corresponding timing.
• Low Access Latency  Access time from clock as low as 5.4 ns (CAS latency = 3 for the -6 grade), enabling fast read access in clocked systems.
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequencing (sequential/interleave), with programmable CAS latency (2 or 3 clocks).
• Refresh and Power  Supports self-refresh and auto-refresh (4096 cycles per 64 ms for commercial/industrial/A1, or 4096 per 16 ms for A2 grade); single 3.3V power supply (spec range 3.0 V to 3.6 V).
• Interface and Operations  LVTTL-compatible interface, random column addressing every clock cycle, and burst read/write or burst read/single write operations with burst termination options.
• Package and Temperature  54-TFBGA (8 × 8 mm) package; operating temperature range −40°C to +85°C (industrial grade option).

Typical Applications

• Embedded memory for high-speed controllers  Parallel SDRAM suited for controllers and processors requiring synchronous, burstable 64Mbit memory.
• Networking and telecom buffers  High-frequency clocking and programmable burst behavior support packet buffering and temporary storage in networking equipment.
• Industrial control electronics  Industrial-grade temperature support (−40°C to +85°C) makes the device appropriate for industrial automation and control systems.

Unique Advantages

• Multi-bank organization: 4-bank, 1M × 16 configuration enables bank interleaving to improve throughput for burst accesses.
• Flexible timing options: Programmable CAS latency (2 or 3) and multiple clock grades allow tuning for system timing and performance targets.
• Burst programmability: Multiple burst lengths and sequence modes (sequential/interleave) simplify integration into varying data-transfer patterns.
• Compact package: 54-ball TFBGA (8×8 mm) reduces board footprint for space-constrained designs while providing a parallel interface.
• Wide supply and refresh support: Operates from 3.0 V to 3.6 V with self-refresh and auto-refresh modes to maintain data integrity.
• Industrial temperature range: Specified operation from −40°C to +85°C for deployment in temperature-challenging environments.

Why Choose IC DRAM 64MBIT PARALLEL 54TFBGA?

The IS45S16400F-6BLA1 positions itself as a compact, synchronous DRAM solution for designs that require a parallel 64Mbit memory with selectable timing and burst behavior. Its 4-bank architecture, programmable CAS and burst settings, and LVTTL interface make it suitable for systems that need predictable, clocked memory transactions.

This device is appropriate for engineers building embedded controllers, networking equipment, or industrial electronics that need a small-package parallel DRAM with industrial temperature capability and multiple clock-grade options for matching system timing and throughput requirements.

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