IS45S16400F-7BLA1

The IS45S16400F-7BLA1 is a 64‑Mbit synchronous dynamic RAM (SDRAM) organized as 1,048,576 × 16 × 4 banks and implemented in a 54‑ball TFBGA (8 mm × 8 mm). It provides a parallel LVTTL interface and is designed for board‑level volatile memory where compact, high‑speed synchronous DRAM is required.

Key attributes include a 143 MHz clock option (‑7 speed grade), programmable burst and CAS timing, and a single 3.3 V power domain with a nominal operating voltage range of 3.0 V to 3.6 V.

Key Features

• Memory Organization Organized as 1,048,576 bits × 16 × 4 banks (4M × 16) yielding 64 Mbit total capacity.
• Synchronous SDRAM Core Fully synchronous device with all signals referenced to the rising edge of the clock for predictable timing and pipelined operation.
• Clock and Timing ‑7 speed grade supports a 143 MHz clock frequency with an access time from clock of 5.4 ns (CAS latency = 3); programmable CAS latency options (2 or 3 clocks) are supported.
• Burst and Refresh Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential/interleave). Supports self‑refresh and auto‑refresh; 4,096 refresh cycles every 64 ms for commercial/industrial/A1 grades or 16 ms for A2 grade, per datasheet.
• Interface Parallel LVTTL interface optimized for synchronous read/write and burst operations, with burst termination and random column addressing every clock cycle.
• Power Single 3.3 V power supply (datasheet reference) with a specified operating supply range of 3.0 V to 3.6 V.
• Package and Mounting 54‑ball thin FBGA (54‑TFBGA, 8 mm × 8 mm) package suitable for compact board‑level mounting.
• Operating Temperature Industrial operating temperature range specified as ‑40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems — Provides a compact 64‑Mbit parallel SDRAM option for board‑level volatile memory expansion and system buffers.
• High‑speed data buffering — Synchronous, pipelined operation with programmable burst modes for burst read/write buffering and random column access every clock cycle.
• Industrial electronics — Industrial temperature range (‑40 °C to +85 °C) and LVTTL interface support use in temperature‑sensitive embedded equipment.

Unique Advantages

• Deterministic synchronous timing: All signals referenced to the positive clock edge enable predictable, pipelined memory transfers and simplified timing analysis.
• Flexible burst operation: Programmable burst lengths and sequences (sequential/interleave) allow tuning throughput and access patterns for application needs.
• Multiple CAS latency options: Programmable CAS latency (2 or 3 clocks) provides flexibility to balance latency and clock rate in system designs.
• Compact BGA footprint: 54‑TFBGA (8 mm × 8 mm) package offers a small board area for dense system designs while providing a parallel memory interface.
• Refresh and low‑power modes: Supports self‑refresh and auto‑refresh modes with documented refresh cycle requirements to maintain data integrity in standby.

Why Choose IS45S16400F-7BLA1?

The IS45S16400F-7BLA1 positions itself as a compact, synchronous 64‑Mbit DRAM solution offering programmable burst behavior, selectable CAS latency, and an LVTTL parallel interface. Its 54‑TFBGA package and industrial operating range make it suitable for designs that require a small footprint and dependable synchronous memory performance.

This device is appropriate for engineers specifying board‑level volatile memory where predictable timing, burst flexibility, and 3.3 V system compatibility are required. The combination of 4 banks, programmable timing and refresh features provides design flexibility for a range of embedded and industrial applications.

Request a quote or submit a pricing inquiry for IS45S16400F-7BLA1 to obtain availability, lead time, and volume pricing information.