IS45S16400F-7TLA1

The IS45S16400F-7TLA1 is a 64‑Mbit synchronous dynamic RAM (SDRAM) organized as 1,048,576 × 16 × 4 banks with a parallel LVTTL interface. It implements a fully synchronous, pipelined architecture with internal banking to support high‑speed burst transfers.

This device is intended for designs that require a 64‑Mbit parallel SDRAM solution with programmable burst and CAS options, offering defined timing and refresh behavior for system memory and buffering applications.

Key Features

• Core Architecture  Organized as 1,048,576 × 16 × 4 banks (4M × 16) to enable internal bank management for improved throughput and overlapped row operations.
• Memory Capacity & Format  64 Mbit DRAM capacity in a parallel memory format with 16‑bit data width.
• Performance  Speed grade -7: clock frequency up to 143 MHz and CAS latency options (2 or 3); documented access time from clock of 5.4 ns for the -7 grade.
• Programmable Burst & Timing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); burst termination via burst stop or precharge command; programmable CAS latency (2, 3 clocks).
• Refresh & Power Management  Supports self‑refresh and auto refresh (CBR). Standard refresh count is 4,096 cycles per 64 ms (Com./Ind./A1 grades) or 4,096 per 16 ms for A2 grade.
• Voltage Supply  Single 3.3 V supply behavior with an operating supply range documented as 3.0 V to 3.6 V.
• Interface  Parallel LVTTL interface with all signals referenced to the positive clock edge for fully synchronous operation.
• Package & Temperature  54‑pin TSOP II package (0.400", 10.16 mm width) with specified operating ambient temperature range of -40°C to +85°C (TA).

Typical Applications

• Parallel SDRAM memory modules  Use as a 64‑Mbit parallel SDRAM element where 16‑bit data paths and banked memory improve throughput.
• High‑speed data buffering  Programmable burst lengths and internal bank architecture support burst read/write buffering and pipeline transfers.
• Embedded system memory expansion  Compact TSOP II packaging and defined timing characteristics make the device suitable for space‑constrained board‑level memory designs.

Unique Advantages

• Configurable performance: Programmable CAS latency and burst length options allow tuning of read/write timing to match system requirements.
• Banked architecture for throughput: Four internal banks enable overlapping row accesses to minimize latency for burst transfers.
• Defined timing for system design: Documented clock frequency and access time for the -7 grade (143 MHz, 5.4 ns access from clock) simplify timing closure.
• Robust refresh support: Self‑refresh and auto refresh modes with specified refresh cycles provide predictable data retention behavior.
• Compact, industry‑standard package: 54‑pin TSOP II (10.16 mm width) supports board‑level integration where profile and footprint matter.
• Wide operating range: Supports a 3.0 V to 3.6 V supply range and industrial temperature operation down to -40°C.

Why Choose IS45S16400F-7TLA1?

The IS45S16400F-7TLA1 positions itself as a focused 64‑Mbit parallel SDRAM offering predictable, synchronous timing and flexible burst/CAS configurations. Its 4‑bank architecture, refresh modes, and LVTTL interface provide an implementation-ready memory block for designs that require defined performance and board‑level integration in a TSOP II package.

This device is suited to engineers specifying fixed‑capacity SDRAM with clear electrical and timing parameters, offering a balance of compact packaging, multiple timing options, and documented refresh behavior for reliable system memory and buffering functions.

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