IS45S16400F-7TLA2-TR

The IS45S16400F-7TLA2-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks (4M × 16). It implements a fully synchronous pipeline architecture with all signals referenced to the rising clock edge to support high‑speed, predictable memory transfers.

Suited for systems that require parallel SDRAM storage in a compact TSOP II package, this device offers selectable performance options, refresh modes and low access latency for embedded and industrial memory buffering tasks.

Key Features

• Core / Architecture Fully synchronous SDRAM with pipeline architecture and internal bank structure for improved throughput and bank interleaving.
• Memory Organization 64‑Mbit capacity organized as 1,048,576 × 16 × 4 banks (4M × 16) providing a parallel 16‑bit data path.
• Clock and Timing Supports clock frequencies including 200, 166, 143 and 133 MHz options; programmable CAS latency of 2 or 3 clocks and access time down to 5.4 ns (CL‑3, -7 speed grade).
• Burst and Sequence Control Programmable burst lengths (1, 2, 4, 8, full page) with selectable sequential or interleave burst sequences and burst termination commands.
• Refresh and Self‑Refresh Auto refresh (CBR), self‑refresh modes and 4096 refresh cycles per specified interval (64 ms for commercial/industrial/A1 grades, 16 ms for A2 grade) as defined in the datasheet.
• Interface and Signaling Standard parallel DRAM interface with LVTTL signaling and random column address capability every clock cycle.
• Power Single 3.3 V power supply (specified 3.0 V to 3.6 V) for core and I/O operation.
• Package 50‑TSOP II package (0.400" / 10.16 mm width) for compact board-level integration.
• Operating Temperature Rated for operation from −40 °C to +105 °C (TA), supporting extended temperature use cases.

Typical Applications

• Industrial Embedded Systems — Extended −40 °C to +105 °C operating range and robust refresh options make it suitable for industrial memory buffering and control applications.
• High‑speed Buffering — Synchronous pipeline architecture, programmable CAS latency and burst modes support short latency buffering in data path designs.
• Communications and Networking — Parallel SDRAM interface and banked organization enable predictable, high‑throughput temporary storage for packet or frame buffering.

Unique Advantages

• Flexible performance scaling: Multiple supported clock frequencies and selectable CAS latency let designers balance throughput and timing for target system requirements.
• Low access latency: Access times as low as 5.4 ns (CL‑3, -7 grade) reduce read latency in time‑sensitive memory operations.
• High density in a compact package: 64‑Mbit capacity in a 50‑TSOP II footprint conserves PCB space while delivering a 16‑bit parallel data path.
• Comprehensive refresh modes: Auto and self‑refresh options with defined refresh cycle counts support reliable data retention across operating conditions.
• Simplified system integration: Single 3.3 V supply and LVTTL interface ease power and logic interfacing on common embedded platforms.

Why Choose IS45S16400F-7TLA2-TR?

The IS45S16400F-7TLA2-TR combines a banked, pipeline SDRAM architecture with selectable timing and burst options to provide a predictable, high‑performance parallel memory solution. Its 64‑Mbit organization, compact 50‑TSOP II package and extended temperature rating make it appropriate for embedded and industrial designs that require reliable temporary storage and deterministic access.

Manufactured by ISSI (Integrated Silicon Solution, Inc.), this device fits designs that prioritize low‑latency SDRAM buffering, scalable performance settings, and straightforward integration with standard 3.3 V LVTTL logic environments.

If you need a quotation or additional technical information for design evaluation or procurement, submit a request for a quote or contact sales to discuss part availability and volume options.