IS45S16400J-6BLA2

IC DRAM 64MBIT PARALLEL 54TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 54TFBGA

Quantity 327 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6BLA2 – 64Mbit SDRAM, Parallel 54-TFBGA

The IS45S16400J-6BLA2 is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface. It is offered in a 54-TFBGA (8×8) package and operates from a 3.0 V to 3.6 V supply.

This device is suited for systems that require external parallel DRAM storage with a 166 MHz clock-rate capability and an access time of 5.4 ns, and for applications that must operate across a wide ambient temperature range.

Key Features

  • Memory Type & Organization SDRAM volatile memory organized as 4M × 16, providing a total density of 64 Mbit.
  • Performance Specified for a clock frequency of 166 MHz with an access time of 5.4 ns.
  • Voltage Supply Operates from 3.0 V to 3.6 V to match common 3V SDRAM system rails.
  • Interface Parallel memory interface suitable for external DRAM integration in parallel-memory architectures.
  • Package Supplied in a 54-TFBGA package (8×8), referenced as the supplier device package.
  • Operating Temperature Rated for ambient temperatures from −40°C to 105°C (TA).

Typical Applications

  • External DRAM for Embedded Systems Provides 64 Mbit parallel SDRAM capacity for systems that require external volatile memory.
  • Parallel-Memory Designs Integrates into designs using a parallel SDRAM interface and 3.0–3.6 V supply rails.
  • Industrial Electronics Suited to applications that require operation across −40°C to 105°C ambient temperature ranges.

Unique Advantages

  • Compact BGA Footprint: 54-TFBGA (8×8) package provides a compact footprint for board-level integration.
  • Moderate Capacity, Parallel Organization: 4M × 16 organization delivers 64 Mbit capacity in a parallel SDRAM format for straightforward memory expansion.
  • Defined Timing and Frequency: 166 MHz clock frequency and 5.4 ns access time give clear performance parameters for system timing.
  • <strong-Wide Operating Range: Rated from −40°C to 105°C (TA), supporting designs that require extended ambient temperature operation.
  • Standard 3V Supply Compatibility: Operates on a 3.0 V to 3.6 V supply, matching common 3V system power rails.

Why Choose IS45S16400J-6BLA2?

The IS45S16400J-6BLA2 positions a moderate-density SDRAM option for designs that need a parallel DRAM device with explicit timing and voltage characteristics. Its 4M × 16 organization, 166 MHz clock capability, and 5.4 ns access time provide defined performance parameters for system memory planning.

This device is appropriate for engineers specifying external SDRAM in applications where a 54-TFBGA package, 3.0–3.6 V operation, and a −40°C to 105°C ambient range are required, delivering a compact, verifiable memory option for long-term designs.

Request a quote or submit an inquiry to obtain pricing and availability for the IS45S16400J-6BLA2.

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