IS45S16400J-6BLA2
| Part Description |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|---|---|
| Quantity | 327 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-6BLA2 – 64Mbit SDRAM, Parallel 54-TFBGA
The IS45S16400J-6BLA2 is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface. It is offered in a 54-TFBGA (8×8) package and operates from a 3.0 V to 3.6 V supply.
This device is suited for systems that require external parallel DRAM storage with a 166 MHz clock-rate capability and an access time of 5.4 ns, and for applications that must operate across a wide ambient temperature range.
Key Features
- Memory Type & Organization SDRAM volatile memory organized as 4M × 16, providing a total density of 64 Mbit.
- Performance Specified for a clock frequency of 166 MHz with an access time of 5.4 ns.
- Voltage Supply Operates from 3.0 V to 3.6 V to match common 3V SDRAM system rails.
- Interface Parallel memory interface suitable for external DRAM integration in parallel-memory architectures.
- Package Supplied in a 54-TFBGA package (8×8), referenced as the supplier device package.
- Operating Temperature Rated for ambient temperatures from −40°C to 105°C (TA).
Typical Applications
- External DRAM for Embedded Systems Provides 64 Mbit parallel SDRAM capacity for systems that require external volatile memory.
- Parallel-Memory Designs Integrates into designs using a parallel SDRAM interface and 3.0–3.6 V supply rails.
- Industrial Electronics Suited to applications that require operation across −40°C to 105°C ambient temperature ranges.
Unique Advantages
- Compact BGA Footprint: 54-TFBGA (8×8) package provides a compact footprint for board-level integration.
- Moderate Capacity, Parallel Organization: 4M × 16 organization delivers 64 Mbit capacity in a parallel SDRAM format for straightforward memory expansion.
- Defined Timing and Frequency: 166 MHz clock frequency and 5.4 ns access time give clear performance parameters for system timing.
- <strong-Wide Operating Range: Rated from −40°C to 105°C (TA), supporting designs that require extended ambient temperature operation.
- Standard 3V Supply Compatibility: Operates on a 3.0 V to 3.6 V supply, matching common 3V system power rails.
Why Choose IS45S16400J-6BLA2?
The IS45S16400J-6BLA2 positions a moderate-density SDRAM option for designs that need a parallel DRAM device with explicit timing and voltage characteristics. Its 4M × 16 organization, 166 MHz clock capability, and 5.4 ns access time provide defined performance parameters for system memory planning.
This device is appropriate for engineers specifying external SDRAM in applications where a 54-TFBGA package, 3.0–3.6 V operation, and a −40°C to 105°C ambient range are required, delivering a compact, verifiable memory option for long-term designs.
Request a quote or submit an inquiry to obtain pricing and availability for the IS45S16400J-6BLA2.