IS45S16400J-6BLA1-TR

IC DRAM 64MBIT PARALLEL 54TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 54TFBGA

Quantity 111 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6BLA1-TR – 64 Mbit Parallel SDRAM, 54-TFBGA

The IS45S16400J-6BLA1-TR is a volatile SDRAM device providing 64 Mbit of storage in a 4M × 16 organization with a parallel memory interface. It delivers synchronous DRAM operation with a specified clock frequency of 166 MHz and a typical access time of 5.4 ns.

This device operates from a 3.0 V to 3.6 V supply and supports an ambient temperature range of -40°C to 85°C, packaged in a compact 54-TFBGA (8×8) form factor for dense board designs.

Key Features

  • Memory Type Volatile SDRAM providing 64 Mbit capacity organized as 4M × 16 for parallel data transfers.
  • Performance Rated clock frequency of 166 MHz with typical access time of 5.4 ns to support synchronous memory operations.
  • Interface Parallel memory interface compatible with parallel SDRAM controller architectures.
  • Power Operating supply voltage range of 3.0 V to 3.6 V, suitable for 3.3 V system rails.
  • Package 54-TFBGA (8×8) package case for compact surface-mount applications.
  • Temperature Range Specified operating ambient temperature from -40°C to 85°C (TA) for extended environmental range.

Typical Applications

  • Embedded Systems — Provides 64 Mbit of parallel SDRAM for embedded designs that require synchronous DRAM memory and a compact package footprint.
  • Industrial Electronics — Suited to systems operating across -40°C to 85°C where a 3.0 V–3.6 V supply and parallel SDRAM are used.
  • Consumer Devices — Integrates into designs that need a 64 Mbit parallel SDRAM solution with 166 MHz clocking and a small 54-TFBGA package.

Unique Advantages

  • Compact 54-TFBGA package: Enables high-density board layouts while providing the full 64 Mbit SDRAM capability.
  • Parallel SDRAM organization (4M × 16): Simplifies connection to parallel memory controllers and supports wide data paths.
  • High-speed access: 166 MHz clocking and 5.4 ns access time facilitate responsive synchronous memory operations.
  • Standard 3.0–3.6 V supply: Compatible with common 3.3 V system rails for straightforward power integration.
  • Extended ambient range: -40°C to 85°C specification supports deployment in temperature-variable environments.

Why Choose IC DRAM 64MBIT PARALLEL 54TFBGA?

The IS45S16400J-6BLA1-TR positions itself as a straightforward, specification-driven parallel SDRAM component offering 64 Mbit density, 166 MHz synchronous operation, and a compact 54-TFBGA package. Its electrical and temperature specifications make it appropriate for designs that require reliable, fast volatile memory in a small footprint.

This part is suited to designers and procurement teams targeting applications that need verifiable performance and environmental range—providing predictable integration into systems that operate from 3.0 V–3.6 V and across -40°C to 85°C.

Request a quote or submit a product inquiry today to obtain pricing, lead time, and availability information for IS45S16400J-6BLA1-TR.

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