IS45S16400J-6CTLA1

IC DRAM 64MBIT PAR 54TSOP II
Part Description

IC DRAM 64MBIT PAR 54TSOP II

Quantity 474 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16400J-6CTLA1 – 64 Mbit SDRAM, 4M × 16, 54‑TSOP II

The IS45S16400J-6CTLA1 is a volatile SDRAM device organized as 4M × 16 for a total of 64 Mbit of storage. It provides a parallel memory interface and is packaged in a 54‑lead TSOP II (0.400", 10.16 mm width) footprint.

This device is intended for systems requiring parallel SDRAM memory with a specified clock frequency and access timing, and it targets designs where a compact TSOP II package and standard 3.0–3.6 V supply are required.

Key Features

  • Memory Core SDRAM memory format organized as 4M × 16, providing 64 Mbit of volatile storage.
  • Interface Parallel memory interface for standard SDRAM connectivity and system integration.
  • Performance Specified clock frequency of 166 MHz with an access time of 5.4 ns, supporting time-critical memory operations.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Package 54‑lead TSOP II package (0.400", 10.16 mm width) for compact board-level integration.
  • Temperature Range Industrial temperature rating from −40 °C to 85 °C (TA).

Unique Advantages

  • Defined memory capacity and organization: 64 Mbit arranged as 4M × 16, enabling predictable memory mapping and sizing.
  • Deterministic timing: 166 MHz clock frequency and 5.4 ns access time provide clear timing parameters for system memory design.
  • Standard supply range: 3.0 V–3.6 V operation matches common SDRAM power domains for straightforward power provisioning.
  • Compact package: 54‑TSOP II package (10.16 mm width) supports space-constrained board layouts while retaining a parallel interface.
  • Wide operating temperature: −40 °C to 85 °C rating supports deployment across a broad range of ambient conditions.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The IS45S16400J-6CTLA1 is positioned for designs that require a 64 Mbit parallel SDRAM device with clear electrical and timing specifications. Its combination of 4M × 16 organization, 166 MHz clocking, and 5.4 ns access time offers predictable performance characteristics for embedded memory subsystems.

With a standard 3.0–3.6 V supply range, industrial temperature rating, and a 54‑lead TSOP II package, this device is suitable for applications needing compact, board-level SDRAM integration and stable operating parameters over a wide temperature range.

Request a quote or submit a product inquiry to obtain pricing and availability for the IS45S16400J-6CTLA1.

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