IS45S16400J-6TLA1-TR
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 595 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16400J-6TLA1-TR – IC DRAM 64Mbit Parallel 54-TSOP II
The IS45S16400J-6TLA1-TR from ISSI is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface. It is delivered in a 54-TSOP II package and operates from a 3.0 V to 3.6 V supply.
Designed for systems that require compact, parallel SDRAM capacity, this device offers up to 166 MHz clock operation with a 5.4 ns access time and an operating temperature range of -40°C to 85°C.
Key Features
- Memory Core 64 Mbit SDRAM organized as 4M × 16, volatile memory format suitable for parallel memory architectures.
- Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for responsive data access.
- Power Operates from a 3.0 V to 3.6 V supply range to match standard 3V system rails.
- Package 54-TSOP II footprint (0.400", 10.16 mm width) for compact board-level implementation.
- Operating Temperature Specified for -40°C to 85°C (TA), covering a broad ambient temperature range.
- Interface Parallel memory interface supporting standard DRAM system connections and layouts.
Unique Advantages
- High-density SDRAM: 64 Mbit total capacity in a 4M × 16 organization provides substantial on-board volatile storage in a single device.
- High-speed access: 166 MHz clock operation and 5.4 ns access time enable fast read/write responsiveness tied directly to the device's timing specs.
- Compact TSOP II package: The 54-TSOP II package (10.16 mm width) minimizes board area for designs constrained by PCB real estate.
- Wide supply tolerance: 3.0 V to 3.6 V supply range allows integration with nominal 3V system power rails.
- Broad temperature range: Rated from -40°C to 85°C (TA), supporting deployment across varied ambient conditions.
Why Choose IS45S16400J-6TLA1-TR?
The IS45S16400J-6TLA1-TR combines a compact 54-TSOP II footprint with 64 Mbit of SDRAM capacity and high-speed timing (166 MHz, 5.4 ns access time), providing a practical memory option for systems that require parallel DRAM in a small package. Its 3.0–3.6 V supply range and -40°C to 85°C operating window make it suitable for designs that must balance performance and environmental tolerance.
Manufactured by Integrated Silicon Solution Inc (ISSI), this device is a straightforward choice when a 4M × 16 parallel SDRAM element is required on the bill of materials and design layout.
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